STMicroelectronics has put considerable effort and investment in the past few years to develop silicon carbide MOSFETs, capitalizing from the experience matured in manufacturing SiC diodes. The advantages of silicon carbide MOSFETs include being a MOSFET structure, a device that is normally off and can be easily driven with a standard driver which can be found in the industry, unlike JFETs which are normally on. Silicon carbide is widely proven in the industry, thanks to the experience accumulated in more than 15 years. The user can directly replace an IGBT, using the same driver with the silicon carbide MOSFET. Thanks to the intrinsic properties of the material, this technology features lower Rds(on) than silicon. Additionally, the material itself can withstand very high temperatures. ST’s SiC devices, for instance, are rated for 200°C, which is the highest temperature guaranteed in the industry. Two of ST’s main competitors can only guarantee 150°C. Another important feature is the small increase of Rds(on) vs. temperature, explained in more detail on the following slide.