The chart on this slide compares the normalized Rds(on) vs. temperature. The blue line represents ST’s silicon carbide technology, and the gray and red lines are the two main competitors. There are not many competitors yet manufacturing silicon carbide MOSFETs. As can be seen, the competitions’ lines stop at 150°C, because these manufacturers do not warranty anything beyond this temperature. The device from STMicroelectronics is rated up to 200°C, this is advantage number one. Second, the Rds(on) in a MOSFET is a parameter that is naturally growing with the temperature. In a silicon MOSFET, when considering the Rds(on) a one @ 25°C becomes 2 or 2.2 at Tj max, 150°C. The competitor’s SiC RDS(on) is about 1.6 at 150°C, ST’s Rds(on), at 150°C, will be only 6% higher than the one that is 25°C. This represents a substantial advantage. Considering that normally all manufacturers specify the Rds(on) in the datasheet front page at 25°C, in a comparison of an 80mΩ device from ST and an 80mΩ device from the competition, the devices will appear to be similar. However, in the real operation condition, such as 125°C, these devices will not be the same. The competitor’s device will then be >140mΩ, whereas the ST device will be at 106mΩ. This means that ST can use a higher Rds(on) device which is normal at 25°C in order to benchmark the competition. STMicroelectronics also has available a 650V silicon carbide MOSFET.