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4th Gen Silicon Carbide (SiC) Discrete FET Product Lineup Image of ROHM's 4th Generation Silicon Carbide Discrete FET Product Lineup

This slide shows ROHM’s lineup of 4th generation SiC FETs. A wide voltage range from 750 V to 1200 V is offered, with ON resistances as low as 13 mΩ typical. Packages include two through-hole types (TO-247N and TO-247-4L), along with a surface-mount package (TO-263-7L). This allows users to select the ideal product to meet specific needs. Simulation models such as SPICE, thermal, and PLECS are available, as well as PCB CAD library symbols and 3D models.

PTM Published on: 2023-03-15