When comparing silicon devices such as IGBTs, SiC FETs deliver considerably lower conduction and switching losses. In fact, up to 74% lower switching losses can be seen with SiC FETs compared to IGBT + FRD solutions. The inverter efficiency map of an electric vehicle traction inverter shows the significant improvement in efficiency of SiC FETs in the high torque and low rotational speed range, along with an expanded high-efficiency area.