Silicon carbide (SiC) is emerging as an ideal semiconductor for power devices used in high-frequency, high-density motor inverter circuits. As a wide bandgap (WBG) semiconductor, SiC provides 10x the dielectric breakdown compared to silicon devices, allowing higher voltage in a smaller footprint. In addition, higher temperature stability allows SiC devices to reliably operate at up to +200°C versus just +150°C with traditional silicon devices. SiC enables operation at much higher frequencies due to significantly lower switching losses, making it possible to reduce the physical sizes of electro-magnetic components such as inductors and motor coils.