There are also a number of commercially available gate-driver ICs that are adequate for driving eGaN® transistors. As low pull-down impedance is required, these ICs tend to be single gate drive buffer ICs with very high current drive capability. Please note that for the 40V EPC devices (EPC1014 and EPC1015), this pull-down resistance requirement can be relaxed. A partial list of these gate-drivers is shown here. It should be noted that some may not meet the 0.5Ω pull-down requirement, which may not be necessary, depending in the actual dV/dt and the eGaN used. Also note that these are drivers designed for Power MOSFETs and may not be the ideal drivers for eGaN technology products.