In summary; EPC brings enhancement mode to GaN. This gives the design engineer a whole new spectrum of performance compared with silicon power MOSFETs. In order to extract full advantage from this new, game-changing technology, designers must first understand how to apply the type of simple and cost-effective drive circuitry that has been demonstrated here. Eventually, semiconductor suppliers will develop driver ICs specifically optimized for eGaN technology using specifications like those presented above for the “ideal” drive IC. When such gate-driver chips become commercially available, the task of transitioning from silicon to eGaN technology will become even more simple and cost effective.