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There are a variety of circuits available with adequate drive capability to drive eGaN FETs. Here are some examples: Considering the gate driver part only, a simple discrete solution is shown here and works for both ground referenced (low-side) and floating (high-side) drivers. This solution requires an accurate external ~5.6V supply (depending on effective forward drop of the bootstrap diode) to supply both high-side and low-side drivers through identical “matching” diodes to achieve the 5.0V gate drive. M2 should be chosen to have 500mΩ or better RDS(ON), while R2 can adjust the effective pull-up resistance (to control voltage overshoot and EMI ringing) without impacting the pull-down impedance. During layout, the loop between the EPC eGaN and the discrete (or IC) gate drive should be minimized. Discrete MOSFETs M1 and M3 should be scaled so they can be driven with a higher impedance (logic input) source while still being able to drive M2 and M4. Resistor R1 is added to limit cross conduction between M1 and M3 and eliminate cross conduction in M2 and M4. For applications with only ground referenced eGaN devices, the diode can be removed and an accurate 5.0V supply can be used to directly power the discrete driver.
