To first understand the differences of an eGaN-specific gate drive and a generic MOSFET driver, it is necessary to consider what characteristics an “ideal” eGaN gate drive would have. Such an “ideal” gate drive solution (IC or discrete) is best considered as two separate functions; (1) the gate driver itself which converts a high impedance logic input into a low impedance source to drive each of the power device gates directly and, (2) the level-shifting, delay-matching and other logic circuitry that assures that the input logic is correctly and timely reproduced at the two power device gates.