The remainder of the presentation will discuss the parallel products, beginning with a review of often used parallel nonvolatile memory terms. As previously reviewed in the serial memory section, nonvolatile memory or NVM is a memory that retains data on power loss, nonvolatile random access memory or NVRAM is a nonvolatile memory that allows direct access to stored data in any random order, and write endurance is the number of times a nonvolatile memory cell can be rewritten before it wears out. New in the parallel section is silicon oxide nitride oxide silicon or SONOS, an insulating charge storage layer in a transistor used to create a nonvolatile memory storage cell. Nonvolatile static random access memory, NVSRAM is a fast SRAM memory with a SONOS nonvolatile memory cell embedded in each SRAM cell to retain data on power loss. Battery backed SRAM or BBSRAM is an SRAM memory connected to a lithium battery to retain data on power loss. Restriction of hazardous substances, abbreviated as “RoHS” is a European Union directive intended to eliminate the use of environmentally hazardous material and electronic components. A redundant array of independent disks or RAID is a storage technology that uses two or more disk drives for redundancy or increased performance.