This slide reviews some of the common serial nonvolatile memory terms used in this presentation. A nonvolatile memory, NVM, is a memory that retains its information on power loss. Nonvolatile random access memory, or NVRAM, is a nonvolatile memory that allows direct access to stored data in a random order. Ferroelectric random access memory, F-RAM, is a fast-write, high-endurance, low-energy nonvolatile memory that uses ferroelectric technology to store data. Electrically erasable programmable read only memory, or EEPROM, is a common nonvolatile memory that uses floating gate technology to store data. Page write is a write to a fixed-length contiguous block of memory. Soak time is the 5 ms required to complete an EEPROM page write when the data is presented at the input buffers. Write endurance is the number of times a nonvolatile memory cell can be rewritten before it wears out. Wear leveling is a method to prolong write endurance that uses EEPROM with up to 8x access capacity and a software algorithm to move storage to unused memory addresses before the write endurance limit on an active address is reached. AEC-Q100 is a quality and reliability standard for automotive applications defined by the Automotive Electronic Council.