Some common serial NVM design problems are reviewed on this slide. First, the key for many electronic devices is to reliably store system data in nonvolatile memory after power loss. EEPROMs have a problem in that they require a 5 ms continuation of active power to page write for soak time. This soak time requires additional capacitors or batteries for page write on power loss, which adds cost and reduces reliability. Mission-critical data may also need to be reliably stored under radiation and or magnetic fields. Second, many data logging applications exceed the one million write cycle limitation of EEPROM. In this case, wear leveling is required to improve the write endurance of EEPROM over a product lifespan. This causes problems as wear leveling requires up to 8x the memory capacity and additional software, which increases cost. Third, systems using EEPROM have increased system power consumption. The increased power consumption is required for the 5 ms EEPROM soak time and for the processing required to do the wear leveling. F-RAM solves these problems. It requires no soak time, eliminating the need for additional capacitors or batteries to complete a page write on power loss. It provides 100 trillion write cycles, eliminating the need for wear leveling. F-RAM consumes two to five times less active power than EEPROM thereby reducing the system power requirement. Additionally, F-RAM cells are inherently gamma-radiation tolerant and are not corrupted by magnetic fields. In short, F-RAM offers 100 million times the endurance of EEPROM while using 30% of the power.