In summary, Cypress F-RAM offers 100,000,000 times the endurance of EEPROM at 30% of the power. Their nvSRAMs are RoHS-compliant and significantly faster than traditional Nonvolatile Memories, and more reliable and easier to implement than BBSRAM solutions. F-RAM requires no soak time, which eliminates the need for additional capacitors or batteries. It eliminates the need for wear leveling with a hundred trillion write cycles. F-RAM consumes less active power than EEPROM, reducing the system power requirement. F-RAM cells are inherently gamma-radiation tolerant and will not be corrupted by magnetic fields. NVSRAM provides 20 ns read-write SRAM access times with unlimited endurance, and requires no batteries to retain data for unlimited periods. Data is reliably stored at power loss without the need for external power management circuits and firmware. Lastly, NVSRAM fully complies with RoHS requirements.