The graphs in the upper right hand corner of this slide provide a comparison of reverse recovery characteristics. The waveforms illustrate the turn-off, or diodes switching from forward bias conducting mode of 10A current to reverse bias. It also shows the off state intervals of a SiC Schottky diode, and an ultrafast soft recovery silicon diode at the junction temperatures of 25, 50, 100, and 150°C. Since SiC Schottky diodes are majority carrier devices which do not have a recombination process during turn-off, there is no reverse recovery current during turn-off.  SiC Schottky diodes reverse characteristics are also independent of forward bias current and junction temperatures. This is illustrated by the red line on the graph.