In summary, the zero reverse recovery feature of SiC diodes enables SMPS designers to improve system efficiency, reduce system physical size (less component count, smaller heatsinks, filter size reduction), and possible cost savings. The selection of SiC Schottky diodes is very much different from Si diode selection, simply because the reverse recovery loss will not be taken into considerations. To protect SiC Schottky boost diodes, a Si surge diode must be designed in for bypassing initial turn-on inrush current.