As discussed before, silicon boost diodes have an inherited high surge current capability due to their larger dies. SiC Schottky diodes are selected mainly based on the forward power transfer requirement since reverse recovery loss is not a concern. To prevent SiC boost diodes from being damaged by the initial turn-on inrush current, a silicon bypass diode needs to be designed in, as shown in this diagram, to ensure all turn-on inrush current will flow through the silicon surge bypass diode to prevent the boost inductor from being saturated during the turn-on transient. This is much more cost effective than using an equivalent current rated SiC Schottky diode in place of the high current rated silicon boost diode.