ALTERNATIVE ENERGY

Key Components for Solar

Main
Inverters
< 50 kW
Micro-
Inverters
Junction
Boxes

MOSFETs

SiHG47N60E/IRFPG50PbF

Single, 600 V and 1000 V N-Channel Power MOSFETs

Features

High-performance E Series high-voltage Super Junction technology (SiHG47N60E)
Maximum current up to 47 A
TO-247 package
Maximum on-resistance of 0.064 Ω atVGS = 10 V for 600 V
Maximum on-resistance of 2 Ω at VGS = 10 V for 1000 V

SiHG47N60E
IRFPG50, SiHFPG50

DIDOES

SMBJ5.0CA

600 W SMB/1500 W SMC TVS VWM = 5 V/VBR = 540 V

Features

1.5SMC540A: 1500 W peak pulse power capability with 10/1000 µs waveform
Unidirectional and bidirectional versions available
Excellent clamping capability

SMBJ5.0A thru SMBJ188A

MOSFETs

SiR872ADP

Single, 150 V N-Channel Power MOSFET

Features

Highly optimized medium voltage ThunderFET®technology
Thermally enhanced PowerPAK® SO-8 packaging
Maximum on-resistance down to 0.018 Ω
On-resistance rating down to VGS = 4.5 V
Typical gate charge of 31.3 nC at VGS = 10 V

SiR872ADP

MOSFETs

SiHB22N60E

Single, 600 V N-Channel Power MOSFET

Features

High-performance E Series high-voltage Super Junction technology
Maximum current of 21 A
D2PAK (TO-263) packaging
Maximum on-resistance of 0.18 Ω at VGS = 10 V

SiHB22N60E

MOSFETs

SiR466DP

Single 30 V and 100 V N-Channel Power MOSFET

Features

Highly optimized medium voltage ThunderFET®technology
Thermally enhanced PowerPAK® SO-8 packaging
Maximum on-resistance down to 3.5 mΩ
On-resistance rating down to VGS = 4.5 V

SiR466DP

OPTOELECTRONICS

SFH691AT-3095

SOP-4 Phototransistor Output Optocoupler

Features

AC input
3750 VRMS isolation voltage
Up to 70 V VCEO
Max VCEsat = 0.3 V at IF = 10 mA, IC = 2 mA

SFH691AT

RECTIFIERS

VFT3045BP

20 A/30 A, 45 V TMBS in P600, ITO220

Features

Trench MOS Schottky technology
Low forward voltage drop
P600 axial package, ITO220 package
RoHS-compliant, halogen-free

VFT3045BP

DIDOES

SMP TVS

400 W SMP TRANSZORB® TVS VWM = 11 V ∼ 36 V

Features

Very low height profile 1.0 mm SMP package
400 W peak pulse power capability with10/1000 µs waveform
Excellent clamping capability
Very fast response time

TRANSZORB® eSMP®

MOSFETs

SiR846ADP

Single 30 V and 100 V N-Channel Power MOSFET

Features

Highly optimized medium voltage ThunderFET®technology
Thermally enhanced PowerPAK® SO-8 packaging
Maximum on-resistance down to 3.5 mΩ
On-resistance rating down to VGS = 4.5 V

SiR846ADP

Key Components for Solar

MOSFETs

SiHG47N60E/IRFPG50PbF

Features

DIDOES

SMBJ5.0CA

Features

MOSFETs

SiR872ADP

Features

MOSFETs

SiHB22N60E

Features

MOSFETs

SiR466DP

Features

OPTOELECTRONICS

SFH691AT-3095

Features

RECTIFIERS

VFT3045BP

Features

DIDOES

SMP TVS

Features

MOSFETs

SiR846ADP

Features

信息

帮助

联系我们

关注我们