63A (Tc) Single FETs, MOSFETs

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of 42

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

BSC109N10NS3GATMA1 MOSFET N-CH 100V 63A TDSON-8-1 Infineon Technologies	31,521 In Stock	1 : ¥13.63000 Cut Tape (CT) 5,000 : ¥5.37141 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	63A (Tc)	6V, 10V	10.9mOhm @ 46A, 10V	3.5V @ 45µA	35 nC @ 10 V	±20V	2500 pF @ 50 V	-	78W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TDSON-8-1	8-PowerTDFN
C3M0032120K SICFET N-CH 1200V 63A TO247-4L Wolfspeed, Inc.	324 In Stock	1 : ¥297.19000 Tube	C3M™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	63A (Tc)	15V	43mOhm @ 40A, 15V	3.6V @ 11.5mA	118 nC @ 15 V	+15V, -4V	3357 pF @ 1000 V	-	283W (Tc)	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4L	TO-247-4
G2R50MT33K 3300V 50M TO-247-4 SIC MOSFET GeneSiC Semiconductor	282 In Stock	1 : ¥2,427.39000 Tube	G2R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	3300 V	63A (Tc)	20V	50mOhm @ 40A, 20V	3.5V @ 10mA (Typ)	340 nC @ 20 V	+25V, -10V	7301 pF @ 1000 V	-	536W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4	TO-247-4
BUK9620-100B,118 MOSFET N-CH 100V 63A D2PAK Nexperia USA Inc.	14,312 In Stock	1 : ¥17.65000 Cut Tape (CT) 800 : ¥7.64148 Tape & Reel (TR)	TrenchMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	100 V	63A (Tc)	4.5V, 10V	18.5mOhm @ 25A, 10V	2V @ 1mA	53.4 nC @ 5 V	±15V	5657 pF @ 25 V	-	203W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPW65R035CFD7AXKSA1 MOSFET N-CH 650V 63A TO247-3-41 Infineon Technologies	1,201 In Stock	1 : ¥62.72000 Tube	CoolMOS™ CFD7A	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	63A (Tc)	10V	35mOhm @ 35.8A, 10V	4.5V @ 1.79mA	145 nC @ 10 V	±20V	7149 pF @ 400 V	-	305W (Tc)	-40°C ~ 150°C (TJ)	Automotive	AEC-Q101	Through Hole	PG-TO247-3-41	TO-247-3
IPW60R031CFD7XKSA1 MOSFET N-CH 650V 63A TO247-3 Infineon Technologies	240 In Stock	1 : ¥88.42000 Tube	CoolMOS™ CFD7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	63A (Tc)	10V	31mOhm @ 32.6A, 10V	4.5V @ 1.63mA	141 nC @ 10 V	±20V	5623 pF @ 400 V	-	278W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO247-3	TO-247-3
C3M0032120D SICFET N-CH 1200V 63A TO247-3 Wolfspeed, Inc.	225 In Stock	1 : ¥208.94000 Tube	C3M™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	63A (Tc)	15V	43mOhm @ 40A, 15V	3.6V @ 11.5mA	114 nC @ 15 V	+15V, -4V	3357 pF @ 1000 V	-	283W (Tc)	-40°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
IXFN80N50Q3 MOSFET N-CH 500V 63A SOT227B IXYS	148 In Stock	1 : ¥430.19000 Tube	HiPerFET™, Q3 Class	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	63A (Tc)	10V	65mOhm @ 40A, 10V	6.5V @ 8mA	200 nC @ 10 V	±30V	10000 pF @ 25 V	-	780W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
SQJ170ELP-T1_GE3 N-CHANNEL 60-V (D-S) 175C MOSFET Vishay Siliconix	6,424 In Stock	1 : ¥8.54000 Cut Tape (CT) 3,000 : ¥3.52116 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	63A (Tc)	4.5V, 10V	16.3mOhm @ 10A, 10V	2.5V @ 250µA	12 nC @ 10 V	±20V	1165 pF @ 25 V	-	136W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SUP10250E-GE3 MOSFET N-CH 250V 63A TO220AB Vishay Siliconix	248 In Stock	1 : ¥22.82000 Tube	ThunderFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	63A (Tc)	7.5V, 10V	-	4V @ 250µA	88 nC @ 10 V	±20V	-	-	375W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
SIHG039N60E-GE3 MOSFET N-CH 600V 63A TO247AC Vishay Siliconix	280 In Stock	1 : ¥88.01000 Tube	E	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	63A (Tc)	10V	39mOhm @ 32A, 10V	5V @ 250µA	126 nC @ 10 V	±30V	4369 pF @ 100 V	-	357W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
IMBG65R030M1HXTMA1 SILICON CARBIDE MOSFET PG-TO263- Infineon Technologies	925 In Stock	1 : ¥105.82000 Cut Tape (CT) 1,000 : ¥66.99980 Tape & Reel (TR)	CoolSiC™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	63A (Tc)	18V	42mOhm @ 29.5A, 18V	5.7V @ 8.8mA	49 nC @ 18 V	+23V, -5V	1643 pF @ 400 V	-	234W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
MCB011N10YL-TP N-CHANNEL MOSFET,D2-PAK Micro Commercial Co	1,600 In Stock	1 : ¥9.85000 Cut Tape (CT) 800 : ¥5.31349 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	63A (Tc)	4.5V, 10V	11mOhm @ 20A, 10V	3V @ 250µA	29.8 nC @ 10 V	±20V	1404 pF @ 50 V	-	100W (Tj)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
E3M0040120J2-TR 40m, 1200V SiC FET, TO-263-7 XL Wolfspeed, Inc.	770 In Stock	1 : ¥166.41000 Cut Tape (CT) 800 : ¥110.38185 Tape & Reel (TR)	E	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	63A (Tc)	15V	53mOhm @ 31.9A, 15V	3.8V @ 8.77mA	91 nC @ 15 V	+19V, -8V	2726 pF @ 1000 V	-	294W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
S2M0025120K MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	270 In Stock	1 : ¥350.56000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	63A (Tc)	20V	34mOhm @ 50A, 20V	4V @ 15mA	130 nC @ 20 V	+25V, -10V	4402 pF @ 1000 V	-	446W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4	TO-247-4
STW68N60M6 MOSFET N-CH 600V TO247-3 STMicroelectronics	103 In Stock	30 : ¥77.66467 Tube	MDmesh™ M6	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	63A (Tc)	0V, 10V	41mOhm @ 31.5A, 10V	4.75V @ 250µA	106 nC @ 10 V	±25V	4360 pF @ 100 V	-	390W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
BUK7620-100A,118 NEXPERIA BUK7620 - TRANSISTOR >3 NXP Semiconductors	3,180 Marketplace	Unavailable Unavailable in your selected currency	TrenchMOS™	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	100 V	63A (Tc)	10V	20mOhm @ 25A, 10V	4V @ 1mA	-	±20V	4373 pF @ 25 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IXFL132N50P3 MOSFET N-CH 500V 63A ISOPLUS264 IXYS	25 In Stock	1 : ¥258.44000 Tube	HiPerFET™, Polar3™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	63A (Tc)	10V	43mOhm @ 66A, 10V	5V @ 8mA	250 nC @ 10 V	±30V	18600 pF @ 25 V	-	520W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	ISOPLUS264™	TO-264-3, TO-264AA
MMIX1F132N50P3 MOSFET N-CH 500V 63A 24SMPD IXYS	20 In Stock 860 Factory	1 : ¥410.41000 Tube	HiPerFET™, Polar3™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	63A (Tc)	10V	43mOhm @ 66A, 10V	5V @ 8mA	250 nC @ 10 V	±30V	18600 pF @ 25 V	-	520W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	24-SMPD	24-PowerSMD, 21 Leads
GP2T040A120U SIC MOSFET 1200V 40M TO-247-3L SemiQ	61 In Stock	1 : ¥147.86000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	63A (Tc)	20V	52mOhm @ 40A, 20V	4V @ 10mA	118 nC @ 20 V	+25V, -10V	3192 pF @ 1000 V	-	322W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
GP2T040A120H SIC MOSFET 1200V 40M TO-247-4L SemiQ	55 In Stock	1 : ¥153.44000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	63A (Tc)	20V	52mOhm @ 40A, 20V	4V @ 10mA	118 nC @ 20 V	+25V, -10V	3192 pF @ 1000 V	-	322W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4	TO-247-4
IPWS65R035CFD7AXKSA1 MOSFET N-CH 650V 63A TO247-3-41 Infineon Technologies	0 In Stock Check Lead Time	30 : ¥71.85767 Tube	CoolMOS™ CFD7A	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	63A (Tc)	10V	35mOhm @ 35.8A, 10V	4.5V @ 1.79mA	145 nC @ 10 V	±20V	7149 pF @ 400 V	-	305W (Tc)	-40°C ~ 150°C (TJ)	Automotive	AEC-Q101	Through Hole	PG-TO247-3-41	TO-247-3
MMIX1T132N50P3 MOSFET N-CH 500V 63A POLAR3 IXYS	0 In Stock Check Lead Time	1 : ¥416.40000 Tube	Polar™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	63A (Tc)	10V	43mOhm @ 66A, 10V	5V @ 8mA	267 nC @ 10 V	±30V	18600 pF @ 25 V	-	520W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	Polar3™	24-PowerSMD, 22 Leads
MCB011N10YLHE3-TP IC Micro Commercial Co	0 In Stock Check Lead Time	1 : ¥13.43000 Cut Tape (CT) 800 : ¥7.96373 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	63A (Tc)	4.5V, 10V	11mOhm @ 20A, 10V	2.5V @ 250µA	29.8 nC @ 10 V	±20V	1404 pF @ 50 V	-	100W (Tj)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PH9930L,115 MOSFET N-CH 30V 63A LFPAK56 NXP USA Inc.	0 In Stock	1,500 : ¥4.00376 Tape & Reel (TR)	TrenchMOS™	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	63A (Tc)	4.5V, 10V	9.9mOhm @ 25A, 10V	2.15V @ 1mA	13.3 nC @ 4.5 V	±20V	1565 pF @ 12 V	-	62.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.

63A (Tc) Single FETs, MOSFETs

63A (Tc) Single FETs, MOSFETs

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