NTH4L040N120M3S

DigiKey Part Number
5556-NTH4L040N120M3S-ND
Manufacturer
Manufacturer Product Number
NTH4L040N120M3S
Description
SILICON CARBIDE (SIC) MOSFET ELI
Manufacturer Standard Lead Time
17 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 54A (Tc) 231W (Tc) Through Hole TO-247-4L
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Series
-
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
54mOhm @ 20A, 18V
Vgs(th) (Max) @ Id
4.4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
75 nC @ 18 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1700 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
231W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L
Package / Case
All prices are in CNY
Tube
QuantityUnit Price
(Including 13% VAT)
Ext Price
(Including 13% VAT)
1¥109.93000¥109.93
30¥88.97200¥2,669.16
120¥83.73700¥10,048.44
510¥75.88694¥38,702.34
1,020¥69.60659¥70,998.72
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.