NTH4L025N065SC1

DigiKey Part Number
5556-NTH4L025N065SC1-ND
Manufacturer
Manufacturer Product Number
NTH4L025N065SC1
Description
SILICON CARBIDE (SIC) MOSFET - 1
Manufacturer Standard Lead Time
17 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 99A (Tc) 348W (Tc) Through Hole TO-247-4L
Datasheet
 Datasheet
EDA/CAD Models
NTH4L025N065SC1 Models
Product Attributes
Type
Description
Select All
Category
Mfr
Series
-
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
28.5mOhm @ 45A, 18V
Vgs(th) (Max) @ Id
4.3V @ 15.5mA
Gate Charge (Qg) (Max) @ Vgs
164 nC @ 18 V
Vgs (Max)
+22V, -8V
Input Capacitance (Ciss) (Max) @ Vds
3480 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
348W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L
Package / Case
All prices are in CNY
Tube
QuantityUnit Price
(Including 13% VAT)
Ext Price
(Including 13% VAT)
1¥164.85000¥164.85
10¥145.19900¥1,451.99
450¥113.80376¥51,211.69
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.