TO-247-4 Single FETs, MOSFETs

Results: 327
Manufacturer
Alpha & Omega Semiconductor Inc.ANBON SEMICONDUCTOR (INT'L) LIMITEDDiodes IncorporatedDiotec SemiconductorFairchild SemiconductorGeneSiC SemiconductorInfineon TechnologiesInventchipLittelfuse Inc.Micro Commercial CoMicrochip TechnologyNexperia USA Inc.
Series
-C2M™C3M™CoolMOS™CoolMOS™ C7CoolMOS™ CFD7CoolMOS™ P6CoolMOS™ P7CoolSiC™CoolSiC™ Gen 2DTMOSVIE
Packaging
BulkTape & Reel (TR)TrayTube
Product Status
ActiveLast Time BuyNot For New DesignsObsolete
FET Type
-N-Channel
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)SiC (Silicon Carbide Junction Transistor)SiCFET (Cascode SiCJFET)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
600 V650 V700 V750 V900 V1000 V1200 V1700 V2000 V3300 V
Current - Continuous Drain (Id) @ 25°C
4.7A (Tc)7A (Tc)11A (Tc)13A (Tc)16A (Tj)17A (Tc)17.3A (Tc)18A (Tc)18.4A (Tc)19A (Tc)20A (Tc)21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V12V15V15V, 18V15V, 20V16V, 20V18V18V, 20V20V-
Rds On (Max) @ Id, Vgs
6.1mOhm @ 146.3A, 20V7.4mOhm @ 80A, 12V9mOhm @ 50A, 12V9.9mOhm @ 108A, 18V11mOhm @ 100A, 12V11.3mOhm @ 93A, 20V11.5mOhm @ 70A, 12V13mOhm @ 100A, 18V13.2mOhm @ 64.2A, 20V14.2mOhm @ 60A, 12V15mOhm @ 41.5A, 20V16mOhm @ 62.5A, 10V
Vgs(th) (Max) @ Id
2.4V @ 1mA2.4V @ 4mA2.6V @ 2mA2.69V @ 10mA2.69V @ 12mA2.69V @ 15mA2.69V @ 7.5mA2.7V @ 15mA2.7V @ 2mA (Typ)2.7V @ 4.5mA (Typ)2.7V @ 50mA2.7V @ 7mA
Gate Charge (Qg) (Max) @ Vgs
5.3 nC @ 18 V8.5 nC @ 18 V11 nC @ 20 V13 nC @ 18 V14 nC @ 20 V15 nC @ 18 V18 nC @ 20 V19 nC @ 18 V21 nC @ 18 V21.5 nC @ 15 V22 nC @ 18 V23 nC @ 18 V
Vgs (Max)
-8V, +19V+15V, -4V+15V, -5V±15V+18V, -3V+18V, -5V+18V, -8V+19V, -8V+20V, -10V+20V, -2V+20V, -5V+20V, -7V
Input Capacitance (Ciss) (Max) @ Vds
170 pF @ 800 V182 pF @ 800 V184 pF @ 1360 V289 pF @ 800 V317 pF @ 800 V350 pF @ 600 V350 pF @ 800 V351 pF @ 500 V454 pF @ 800 V458 pF @ 800 V495 pF @ 800 V513 pF @ 1000 V
FET Feature
-Current Sensing
Power Dissipation (Max)
60W (Tc)68W (Tc)72W (Tc)75W (Tc)76W (Tc)83W (Tc)86W (Tc)94W (Tc)95W (Tc)96W (Tc)98W (Tc)103W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 200°C (TJ)-40°C ~ 150°C (TJ)-40°C ~ 175°C (TJ)150°C150°C (TJ)175°C175°C (TJ)-
Grade
-Automotive
Qualification
-AEC-Q101
Supplier Device Package
PG-TO247PG-TO247-4PG-TO247-4-1PG-TO247-4-11PG-TO247-4-14PG-TO247-4-3PG-TO247-4-8PG-TO247-4-U02PG-TO247-4-U04TO-247TO-247-4TO-247-4LTO-247-4L(T)TO-247-4L(X)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-247-4
NTH4L160N120SC1
SICFET N-CH 1200V 17.3A TO247
onsemi
450
In Stock
1 : ¥69.78000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
17.3A (Tc)
20V
224mOhm @ 12A, 20V
4.3V @ 2.5mA
34 nC @ 20 V
+25V, -15V
665 pF @ 800 V
-
111W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
TO-247-4L
UJ4C075033K4S
750V/33MOHM, SIC, CASCODE, G4, T
Qorvo
574
In Stock
1 : ¥88.26000
Tube
-
Tube
Active
N-Channel
SiCFET (Cascode SiCJFET)
750 V
47A (Tc)
12V
41mOhm @ 30A, 12V
6V @ 10mA
37.8 nC @ 15 V
±20V
1400 pF @ 400 V
-
242W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
TO-247-4 Top
G3R75MT12K
SIC MOSFET N-CH 41A TO247-4
GeneSiC Semiconductor
537
In Stock
1 : ¥88.42000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
41A (Tc)
15V
90mOhm @ 20A, 15V
2.69V @ 7.5mA
54 nC @ 15 V
+22V, -10V
1560 pF @ 800 V
-
207W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
CoolSiC Series
IMZ120R060M1HXKSA1
SICFET N-CH 1.2KV 36A TO247-4
Infineon Technologies
217
In Stock
1 : ¥103.03000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
36A (Tc)
15V, 18V
78mOhm @ 13A, 18V
5.7V @ 5.6mA
31 nC @ 18 V
+23V, -7V
1060 pF @ 800 V
-
150W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-1
TO-247-4
TO-247-4L
UF3C065040K4S
MOSFET N-CH 650V 54A TO247-4
Qorvo
9,529
In Stock
1 : ¥105.99000
Tube
-
Tube
Active
N-Channel
-
650 V
54A (Tc)
12V
52mOhm @ 40A, 12V
6V @ 10mA
43 nC @ 12 V
±25V
1500 pF @ 100 V
-
326W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
TO-247-4L
UJ4C075023K4S
750V/23MOHM, SIC, CASCODE, G4, T
Qorvo
692
In Stock
1 : ¥119.21000
Tube
-
Tube
Active
N-Channel
SiCFET (Cascode SiCJFET)
750 V
66A (Tc)
12V
29mOhm @ 40A, 12V
6V @ 10mA
37.8 nC @ 15 V
±20V
1400 pF @ 400 V
-
306W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
TO-247-4L
UF3C065030K4S
MOSFET N-CH 650V 85A TO247-4
Qorvo
1,955
In Stock
1 : ¥150.24000
Tube
-
Tube
Active
N-Channel
-
650 V
85A (Tc)
12V
35mOhm @ 50A, 12V
6V @ 10mA
43 nC @ 12 V
±25V
1500 pF @ 100 V
-
441W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
171
In Stock
1 : ¥154.02000
Tube
Tube
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
2000 V
26A (Tc)
15V, 18V
131mOhm @ 10A, 18V
5.5V @ 6mA
55 nC @ 18 V
+20V, -7V
-
-
217W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-U04
TO-247-4
TO-247-4
IPZ65R019C7XKSA1
MOSFET N-CH 650V 75A TO247-4
Infineon Technologies
1,203
In Stock
1 : ¥160.99000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
650 V
75A (Tc)
10V
19mOhm @ 58.3A, 10V
4V @ 2.92mA
215 nC @ 10 V
±20V
9900 pF @ 400 V
-
446W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PG-TO247-4
TO-247-4
C3M0065100K
C3M0075120K
SICFET N-CH 1200V 30A TO247-4L
Wolfspeed, Inc.
1,324
In Stock
1 : ¥164.28000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
30A (Tc)
15V
90mOhm @ 20A, 15V
4V @ 5mA
51 nC @ 15 V
+19V, -8V
1350 pF @ 1000 V
-
113.6W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
C3M0065100K
C3M0065100K
SICFET N-CH 1000V 35A TO247-4L
Wolfspeed, Inc.
601
In Stock
1 : ¥175.12000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1000 V
35A (Tc)
15V
78mOhm @ 20A, 15V
3.5V @ 5mA
35 nC @ 15 V
+19V, -8V
660 pF @ 600 V
-
113.5W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
TO-247-4 Top
G3R30MT12K
SIC MOSFET N-CH 90A TO247-4
GeneSiC Semiconductor
1,479
In Stock
1 : ¥184.97000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
90A (Tc)
15V
36mOhm @ 50A, 15V
2.69V @ 12mA
155 nC @ 15 V
±15V
3901 pF @ 800 V
-
400W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
TO-247-4
FCH023N65S3L4
MOSFET N-CH 650V 75A TO247
onsemi
422
In Stock
1 : ¥185.54000
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
650 V
75A (Tc)
10V
23mOhm @ 37.5A, 10V
4.5V @ 7.5mA
222 nC @ 10 V
±30V
7160 pF @ 400 V
-
595W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
323
In Stock
1 : ¥194.08000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
98A (Tc)
15V, 18V
26.9mOhm @ 41A, 18V
5.2V @ 17.6mA
109 nC @ 18 V
+20V, -5V
3460 pF @ 800 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-8
TO-247-4
C3M0065100K
C3M0040120K
1200V 40MOHM SIC MOSFET
Wolfspeed, Inc.
2,050
In Stock
1 : ¥221.83000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
66A (Tc)
15V
53.5mOhm @ 33.3A, 15V
3.6V @ 9.2mA
99 nC @ 15 V
+15V, -4V
2900 pF @ 1000 V
-
326W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
TO-247-4
NTH4L015N065SC1
SILICON CARBIDE MOSFET, NCHANNEL
onsemi
130
In Stock
1 : ¥223.06000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
650 V
142A (Tc)
15V, 18V
18mOhm @ 75A, 18V
4.3V @ 25mA
283 nC @ 18 V
+22V, -8V
4790 pF @ 325 V
-
500W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
TO-247-4
NTH4L020N090SC1
SILICON CARBIDE MOSFET, NCHANNEL
onsemi
424
In Stock
1 : ¥223.96000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
900 V
116A (Tc)
15V, 18V
28mOhm @ 60A, 15V
4.3V @ 20mA
196 nC @ 15 V
+22V, -8V
4415 pF @ 450 V
-
484W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
242
In Stock
1 : ¥250.07000
Tube
Tube
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
2000 V
34A (Tc)
15V, 18V
98mOhm @ 13A, 18V
5.5V @ 7.7mA
64 nC @ 18 V
+20V, -7V
-
-
267W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-U04
TO-247-4
TO-247-4L
UF4SC120023K4S
1200V/23MOHM SIC STACKED FAST CA
Qorvo
1,487
In Stock
1 : ¥255.08000
Tube
-
Tube
Active
N-Channel
SiCFET (Cascode SiCJFET)
1200 V
53A (Tc)
12V
29mOhm @ 40A, 12V
6V @ 10mA
37.8 nC @ 15 V
±20V
1430 pF @ 800 V
-
385W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
TO-247-4
MSC400SMA330B4
MOSFET SIC 3300 V 400 MOHM TO-24
Microchip Technology
506
In Stock
1 : ¥263.62000
Bulk
-
Bulk
Active
N-Channel
SiCFET (Silicon Carbide)
3300 V
11A (Tc)
20V
520mOhm @ 5A, 20V
2.97V @ 1mA
37 nC @ 20 V
+23V, -10V
579 pF @ 2400 V
-
131W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
TO-247-4 Top
G3R45MT17K
SIC MOSFET N-CH 61A TO247-4
GeneSiC Semiconductor
749
In Stock
1 : ¥271.50000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
61A (Tc)
15V
58mOhm @ 40A, 15V
2.7V @ 8mA
182 nC @ 15 V
±15V
4523 pF @ 1000 V
-
438W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
853
In Stock
1 : ¥275.11000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
127A (Tc)
15V, 18V
18.4mOhm @ 54.3A, 18V
5.2V @ 23.4mA
145 nC @ 18 V
+20V, -5V
4580 pF @ 25 V
-
455W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-8
TO-247-4
TO-247-4 Top
G3R20MT12K
SIC MOSFET N-CH 128A TO247-4
GeneSiC Semiconductor
1,038
In Stock
1 : ¥296.29000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
128A (Tc)
15V
24mOhm @ 60A, 15V
2.69V @ 15mA
219 nC @ 15 V
±15V
5873 pF @ 800 V
-
542W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
C3M0065100K
C3M0032120K
SICFET N-CH 1200V 63A TO247-4L
Wolfspeed, Inc.
324
In Stock
1 : ¥297.19000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
63A (Tc)
15V
43mOhm @ 40A, 15V
3.6V @ 11.5mA
118 nC @ 15 V
+15V, -4V
3357 pF @ 1000 V
-
283W (Tc)
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
TO-247-4
NVH4L018N075SC1
SIC MOS TO247-4L 750V
onsemi
187
In Stock
1 : ¥308.85000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
750 V
140A (Tc)
15V, 18V
18mOhm @ 66A, 18V
4.3V @ 22mA
262 nC @ 18 V
+22V, -8V
5010 pF @ 375 V
-
500W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-4L
TO-247-4
Showing
of 327

TO-247-4 Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.