NTH4L070N120M3S

DigiKey Part Number
5556-NTH4L070N120M3S-ND
Manufacturer
Manufacturer Product Number
NTH4L070N120M3S
Description
SILICON CARBIDE (SIC) MOSFET EL
Manufacturer Standard Lead Time
17 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 34A (Tc) 160W (Tc) Through Hole TO-247-4L
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Series
-
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
87mOhm @ 15A, 18V
Vgs(th) (Max) @ Id
4.4V @ 7mA
Gate Charge (Qg) (Max) @ Vgs
57 nC @ 18 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1230 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
160W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L
Package / Case
All prices are in CNY
Tube
QuantityUnit Price
(Including 13% VAT)
Ext Price
(Including 13% VAT)
1¥65.92000¥65.92
10¥56.47300¥564.73
450¥41.52351¥18,685.58
1,350¥37.37115¥50,451.05
2,250¥35.01820¥78,790.95
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.