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The first-generation of power MOSFET transistors, (DMOS), was successfully introduced into the market in the early 1980s by International Rectifier. This technology was a vertical MOSFET with a planar gate structure, known as a planar power MOSFET. The second-generation of macrocell technology, TrenchFET® introduced by Siliconix, became popular in the 1990s. This technology delivered an improved switch resistance (RDSON). Trench-FET technology has a clear superiority over DMOS in terms of resistance and gate charge for a specific product when designed for a drain voltage capability lower than 100 V. Low switch resistance reduced the conduction power loss in the supply circuits. However, switching loss, which is very important in a switch-mode power supply (SMPS), remained the main obstacle. In order to reduce cost, size and improve performances such as the transient response of the whole power management system, the converter’s switching frequency needed to be increased. A third-generation of macrocell power MOSFET technology recently introduced by Texas Instruments, NexFET technology, offers a specific RDSON competitive to the TrenchFET RDSON, but the NexFET technology has significantly reduced input and Miller capacitances. Low capacitances mean low input gate charge and short voltage transients during switching. This new generation of MOSFET reduces switching losses in switch mode power supply applications and enables operation at high switching frequencies. This technology is most advantageous at 30 V and below, which is desirable for the distributed bus architectures prevalent in today’s end systems.
