Now that this module has provided the benefits of using GaN FETs and the gate drive challenges associated with this new enhancement mode GaN FET technology. Texas Instruments would now like to show a gate driver that was co-defined by EPC and TI to overcome the drive challenges in eGaN FETs and unlock their potential. The LM5113 is the industry’s first 100V Bridge driver designed specifically to solve the challenges of driving eGaN FETs and unleash the new efficiency and power density capabilities of GaN FETs. The LM5113 is a 100V half-bridge driver for eGaN, enhancement mode GaN FETs. This driver integrates several discrete components into a highly integrated driver with all the characteristics to solve the challenges of driver eGaN FETs: low sink resistance of 0.5 ohms to maximize dv/dt immunity and prevent undesired low side FET turn-on, independent sink and source outputs to control and dampen any turn-on overshoot without impacting the turn-off of the FET, and an internal boostrap supply voltage clamp to operate the high side driver at an optimum gate-source voltage of 5.2V. The device is released in a small 4mm x 4mm LLP-10 package and will be also released in a even small 1.8mm x 1.9mm µSMD package to achieve even greater levels of power density.