High reverse conduction current through the ‘body diode’ also causes wide variations in bootstrap supply voltage. At high system currents, reverse conduction voltage increases, adding to the bootstrap supply voltage. The variation in reverse conduction voltage is wider than the range of drive voltage allowed by eGaN FETs. To avoid overvoltage or under enhancement, a proprietary clamp circuit is used to keep the drive voltage below 5.2V. This will ensure a gate drive that is adequately high in voltage for full enhancement, yet low enough to ensure reliable operation and not exceed the maximum gate-source voltage of the eGaN FET.