The new design considerations associated with GaN require a gate driver optimized for the technology in order to unlock their benefits. The LM5113, 100V half-bridge gate driver solves many of the challenges with driving GaN FETs. The driver decreases turn-off time, prevents unintended turn-on events and overshoots, thanks to its low sink resistance and independent source and sink terminals. Reducing dead-time losses are achieved with separate inputs and propagation delays for each driver. To guarantee the maximum gate-source voltage of the eGaN FET is not exceeded, a proprietary clamp circuit is employed to enable full enhancement of the FET but low enough for reliable operation.