In summary; EPC brings enhancement mode to GaN. This gives the design engineer a whole new spectrum of performance compared with silicon power MOSFETs. eGaN FETs enable higher frequency which drives up power density and drives down filter cost. The LM5113 from Texas Instruments is a driver IC optimized for eGaN technology. The driver provides a bootstrap clamp enabling a reliable gate dive, decreases turn-off time, prevents unintended turn-on events and overshoots with its low sink resistance and independent source and sink terminals, and reduced dead-time losses are achieved with separate inputs and propagation delays for each driver. These features will allow designers to extract full advantage from this new, game-changing technology. With the release of such gate-driver chips, the task of transitioning from silicon to eGaN technology becomes even more simple and cost effective.