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LM5113-Slide1

Welcome to Texas Instruments and EPC’s “Driving eGaN FETs with the LM5113” product training module. This presentation covers the advantages of EPC’s enhancement mode gallium nitride transistors as well as some of the key design challenges of implementing this new device technology. It will additionally cover how the LM5113 Half-Bridge driver IC from Texas Instruments addresses these key design challenges and learn how to implement this combined solution in actual design circuits.

PTM Published on: 2012-10-16