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Advantages of GaN HEMT

This slide shows the comparison data of power loss (shown as both conduction loss and switching loss) between ROHM’s EcoGaN™ HEMT device compared to a traditional silicon MOSFET (55% lower) and another vendor’s GaN product (shown as standard product, 20% lower). Conduction losses are comparable; however, switching loss of ROHM's EcoGaN HEMT device is much smaller compared to traditional silicon MOSFET and GaN product. Thus, lower power consumption in the end application is made possible when ROHM's EcoGaN HEMT device is used rather than the other options.

PTM Published on: 2024-05-14