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Introduction

Welcome to the ROHM 650 V EcoGaN™ HEMT Power Devices and System-in-Package Power Stage Products product training module. This presentation will provide an introduction to gallium nitride (GaN) power devices and their end application usage, as well as introduce the product lineup and advantages of 650 V EcoGaN high-electron mobility transistor (HEMT) discrete power devices and system-in-package (SiP) power stage solutions from ROHM.

PTM Published on: 2024-05-14