One example of an advantage to using GaN HEMT devices is the reduction in the size of AC adapters. Since GaN HEMT devices can operate at much higher switching frequencies, this allows the magnetic components (e.g. transformers) being used to be smaller. In the example here, it is shown where the transformer size has reduced by approximately 1/2.5 times when switching frequency is increased from 100 kHz to 300 kHz. Moreover, since GaN HEMT devices can operate with much lower losses compared to silicon super junction MOSFETs, it is possible to have a solution that does not require any heatsink. This further allows miniaturization.