The chart here shows the various application ranges of power devices. Due to the advantages of GaN as mentioned in the previous pages, the positioning of GaN HEMT devices are mainly targeted for extremely high switching frequency operation (much more than 200 kHz) in the medium voltage range (from 100 V to 600 V). GaN HEMT devices are not meant to overlap applications that can be covered by traditional power devices that ROHM already has in mass production, such as insulated gate bipolar junction transistors (IGBT), silicon MOSFETs, and silicon-carbide MOSFETs which cover much higher power but at lower switching frequencies. Instead, GaN HEMT devices are meant to complement those devices to cover operation regions that the traditional devices cannot optimally operate at. ROHM is now underway in development of both 150 V and 650 V EcoGaN HEMT power devices with part numbers already released to production.