The dynamic ON-resistance (R_ON) has been one focus of the dynamic behavior of GaN power devices. The behavior manifests itself due to the trapping of electrons during the off-state and especially at higher drain voltages. This leads to the ON-resistance value degrading (ie. increased ON-resistance) over time, resulting in increased conduction losses. The result shown here shows that ROHM's EcoGaN™ HEMT power device exhibits the fastest time for the ON-resistance to recover back down to nominal values. This then allows ROHM's EcoGaN HEMT power devices to be used at higher switching speeds compared to the competitors.