Gallium nitride (GaN) is a wide bandgap (WBG) semiconductor. Compared to traditional silicon semiconductors, it has many advantages such as: higher breakdown electric field, higher electron mobility, and higher electron saturation velocity. All of these advantages allow GaN devices to be used in high power and specifically for high-frequency switching applications. Moreover, compared to silicon and silicon-carbide devices, GaN devices exhibit much better R_ON area performance, allowing smaller R_DS(on) devices at higher breakdown voltages.