The gate drive voltages can be set to different levels, including 7, 10, 12, and 15 V. Because of the charge pumps, these voltage levels can be maintained even if the battery voltage drops to a lower level. This allows using standard gate level MOSFETs. The control of the drain-source rise and fall times is one of the most important parameters to optimize drive systems. This affects critical factors such as switching losses, dead time optimization, EMI optimization, and drain voltage ringing, which can lead to possible MOSFET avalanching. Another key feature of the 6EDL7141 is the ability to control the rise and fall slew rates of the drain-to-source voltage. This is done by adjusting the gate drive sink and source currents during different time segments in the switch-on and switch-off processes. This feature allows the designer to eliminate diode resistor networks, which are commonly used in gate drive circuits. In most cases, gate resistors can also be removed, therefore reducing component count, simplifying the circuit layout, and allowing further optimization.