This figure compares the theoretical resistance-times-die area voltage limits of GaN, silicon carbide and silicon as a function of voltage. EPC’s first generation of devices is shown as well. Please note that after thirty years of silicon MOSFET development, silicon has approached its theoretical limits. Progress in silicon has slowed to the point where small gains incur significant development cost. In contrast, GaN is young in its life cycle, and will see significant improvement in the years to come.