Welcome to EPC’s eGaN®  FET Characteristics product training module. In June 2009, Efficient Power Conversion Corporation (EPC) introduced the first enhancement-mode GaN (eGaN) FETs designed specifically as replacements for power MOSFETs. These products were also designed to be produced in high volume at low cost using standard silicon manufacturing technology and facilities. Thirty years of silicon power-MOSFET development taught us that one of the key variables controlling the adoption rate of a disruptive technology is how easy the new technology is to use. This principle has guided the design of EPC’s enhancement-mode GaN transistors. To explain the eGaN devices’ ease-of-use, this presentation covers the operation of EPC’s enhancement mode gallium nitride transistors and highlights both their similarities and differences versus today’s power MOSFETs. With that as background, this presentation will describe the gate-drive requirements for eGaN FETs.