The RDS(ON) versus Gate-Source Voltage curves are similar to those of MOSFETs. EPC’s eGaN FETs are designed to operate with 5V drive. This figure shows the set of curves for the EPC2001. The curves show that RDS(ON) continues to decrease as the absolute maximum gate voltage is approached. As there is negligible gate drive loss penalty, eGaN FETs should be driven with 5V. The temperature coefficient of RDS(on) for the eGaN FET is also similar to that of the silicon MOSFET in that it is positive, but the magnitude is significantly less. At 125°C, the RDS(ON) of the 100V eGaN FET is 1.45 times the 25°C value compared to 1.7 times for silicon.