Single FETs, MOSFETs

Results: 8
Manufacturer
Infineon TechnologiesonsemiTexas InstrumentsVishay Siliconix
Series
NexFET™OptiMOS™OptiMOS™ 5PowerTrench®TrenchFET®
Product Status
ActiveDiscontinued at Digi-Key
Drain to Source Voltage (Vdss)
60 V80 V100 V
Current - Continuous Drain (Id) @ 25°C
29A (Ta), 120A (Tc)33A (Ta), 205A (Tc)100A (Ta)120A (Tc)150A (Tc)222A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V7.5V, 10V10V
Rds On (Max) @ Id, Vgs
1.83mOhm @ 100A, 10V2mOhm @ 100A, 10V2.3mOhm @ 100A, 10V2.4mOhm @ 30A, 10V2.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
2.8V @ 143µA3.2V @ 250µA3.8V @ 154µA3.8V @ 270µA3.8V @ 280µA4V @ 250µA4V @ 700µA
Gate Charge (Qg) (Max) @ Vgs
106 nC @ 10 V123 nC @ 10 V152 nC @ 10 V156 nC @ 10 V210 nC @ 10 V223 nC @ 10 V227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
7800 pF @ 30 V8970 pF @ 40 V10680 pF @ 40 V11180 pF @ 50 V12200 pF @ 40 V16000 pF @ 50 V16900 pF @ 40 V
Power Dissipation (Max)
3W (Ta), 214W (Tc)3.8W (Ta), 375W (Tc)45W (Tc)214W (Tc)375W (Tc)
Supplier Device Package
PG-TO220-3TO-220-3TO-220ABTO-220F
Package / Case
TO-220-3TO-220-3 Full Pack
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
488-TO-220AB
FDP2D3N10C
MOSFET N-CH 100V 222A TO220-3
onsemi
186
In Stock
162,400
Factory
1 : ¥50.98000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
222A (Tc)
10V
2.3mOhm @ 100A, 10V
4V @ 700µA
152 nC @ 10 V
±20V
11180 pF @ 50 V
-
214W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
TO-220F
FDPF2D3N10C
MOSFET N-CH 100V 222A TO220F
onsemi
1,019
In Stock
3,000
Factory
1 : ¥54.27000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
222A (Tc)
10V
2.3mOhm @ 100A, 10V
4V @ 700µA
152 nC @ 10 V
±20V
11180 pF @ 50 V
-
45W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
TO-220-3
CSD19506KCS
MOSFET N-CH 80V 100A TO220-3
Texas Instruments
149
In Stock
1 : ¥38.91000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
80 V
100A (Ta)
6V, 10V
2.3mOhm @ 100A, 10V
3.2V @ 250µA
156 nC @ 10 V
±20V
12200 pF @ 40 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
474
In Stock
1 : ¥52.62000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
33A (Ta), 205A (Tc)
6V, 10V
1.83mOhm @ 100A, 10V
3.8V @ 270µA
210 nC @ 10 V
±20V
16000 pF @ 50 V
-
3.8W (Ta), 375W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
TO-220-3
IPP027N08N5AKSA1
MOSFET N-CH 80V 120A TO220-3
Infineon Technologies
370
In Stock
1 : ¥28.32000
Tube
Tube
Discontinued at Digi-Key
N-Channel
MOSFET (Metal Oxide)
80 V
120A (Tc)
6V, 10V
2.7mOhm @ 100A, 10V
3.8V @ 154µA
123 nC @ 10 V
±20V
8970 pF @ 40 V
-
214W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
TO-220-3
IPP020N06NAKSA1
MOSFET N-CH 60V 29A/120A TO220-3
Infineon Technologies
398
In Stock
1 : ¥29.14000
Tube
Tube
Discontinued at Digi-Key
N-Channel
MOSFET (Metal Oxide)
60 V
29A (Ta), 120A (Tc)
6V, 10V
2mOhm @ 100A, 10V
2.8V @ 143µA
106 nC @ 10 V
±20V
7800 pF @ 30 V
-
3W (Ta), 214W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
TO-220-3
IPP020N08N5AKSA1
MOSFET N-CH 80V 120A TO220-3
Infineon Technologies
572
In Stock
1 : ¥34.65000
Tube
Tube
Discontinued at Digi-Key
N-Channel
MOSFET (Metal Oxide)
80 V
120A (Tc)
6V, 10V
2mOhm @ 100A, 10V
3.8V @ 280µA
223 nC @ 10 V
±20V
16900 pF @ 40 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
TO-220AB
SUP60020E-GE3
MOSFET N-CH 80V 150A TO220AB
Vishay Siliconix
0
In Stock
Check Lead Time
1 : ¥24.55000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
80 V
150A (Tc)
7.5V, 10V
2.4mOhm @ 30A, 10V
4V @ 250µA
227 nC @ 10 V
±20V
10680 pF @ 40 V
-
375W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.