JFETs

Results: 13

Filters

Stacked

Scrolling

Showing

of 13

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Voltage - Breakdown (V(BR)GSS)	Drain to Source Voltage (Vdss)	Current - Drain (Idss) @ Vds (Vgs=0)	Current Drain (Id) - Max	Voltage - Cutoff (VGS off) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Resistance - RDS(On)	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

J113-D74Z JFET N-CH 35V TO92-3 onsemi	81,727 In Stock 6,000 Factory	1 : ¥2.22000 Cut Tape (CT) 2,000 : ¥0.66397 Tape & Box (TB)	-	Cut Tape (CT) Tape & Box (TB)	Active	N-Channel	35 V	-	2 mA @ 15 V	-	500 mV @ 1 µA	-	100 Ohms	625 mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-92-3
J109 JFET N-CH 25V TO92-3 onsemi	28,431 In Stock 10,000 Factory	1 : ¥3.45000 Bulk	-	Bulk	Active	N-Channel	25 V	-	40 mA @ 15 V	-	2 V @ 10 nA	-	12 Ohms	625 mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
2N4393 PBFREE JFET N-CH 40V TO18 Central Semiconductor Corp	1,137 In Stock	1 : ¥24.05000 Bulk	-	Bulk	Active	N-Channel	40 V	-	5 mA @ 20 V	-	500 mV @ 1 nA	14pF @ 20V	100 Ohms	1.8 W	-65°C ~ 175°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18
PN4416 TO-92 3L ROHS JFET N-CH 30V TO92 Linear Integrated Systems, Inc.	1,766 In Stock	1 : ¥25.04000 Bulk	PN4416	Bulk	Active	N-Channel	30 V	-	-	-	-	0.8pF @ 15V	-	300 mW	-55°C ~ 135°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
J212 TO-92 3L ROHS JFET N-CH 25V TO92 Linear Integrated Systems, Inc.	989 In Stock	1 : ¥31.44000 Bulk	J212	Bulk	Active	N-Channel	25 V	-	15 mA @ 15 V	-	4 V @ 1 nA	4pF @ 15V	-	360 mW	-55°C ~ 150°C	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
J211 TO-92 3L ROHS JFET N-CH 25V TO92 Linear Integrated Systems, Inc.	1,250 In Stock	1 : ¥32.10000 Bulk	J211	Bulk	Active	N-Channel	25 V	-	7 mA @ 15 V	-	2.5 V @ 1 nA	4pF @ 15V	-	360 mW	-55°C ~ 150°C	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
J309 TO-92 3L ROHS JFET N-CH 25V TO92 Linear Integrated Systems, Inc.	838 In Stock	1 : ¥32.92000 Bulk	J309	Bulk	Active	N-Channel	25 V	-	12 mA @ 10 V	-	1 V @ 1 nA	4pF @ 10V	35 Ohms	350 mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
J310 TO-92 3L ROHS JFET N-CH 25V TO92 Linear Integrated Systems, Inc.	784 In Stock	1 : ¥34.32000 Bulk	J310	Bulk	Active	N-Channel	25 V	-	24 mA @ 10 V	-	2 V @ 1 nA	4pF @ 10V	35 Ohms	350 mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
PF5301 TO-92 3L ROHS JFET N-CH 30V TO92 Linear Integrated Systems, Inc.	986 In Stock	1 : ¥36.45000 Bulk	-	Bulk	Active	N-Channel	30 V	-	30 µA @ 10 V	-	3 V @ 1 nA	3pF @ 10V	-	300 mW	-55°C ~ 135°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
PN4119 TO-92 3L ROHS JFET N-CH 40V TO92 Linear Integrated Systems, Inc.	990 In Stock	1 : ¥39.90000 Cut Tape (CT) 1,000 : ¥15.28666 Tape & Reel (TR)	PN4119	Tape & Reel (TR) Cut Tape (CT)	Active	N-Channel	40 V	-	200 µA @ 10 V	-	2 V @ 1 nA	3pF @ 10V	-	300 mW	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
LS846 TO-92 3L ROHS JFET N-CH 60V TO92 Linear Integrated Systems, Inc.	974 In Stock	1 : ¥51.89000 Bulk	LS846	Bulk	Active	N-Channel	60 V	-	1.5 mA @ 15 V	-	1 V @ 1 nA	8pF @ 15V	-	300 mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92
SST111 SOT-23 3L ROHS JFET N-CH 35V SOT23-3 Linear Integrated Systems, Inc.	2,987 In Stock	1 : ¥53.61000 Cut Tape (CT) 3,000 : ¥26.90889 Tape & Reel (TR)	SST111	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	35 V	-	-	-	-	12pF @ 10V	30 Ohms	350 mW	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
J201 TO-92 3L ROHS JFET N-CH 40V 10MA TO92 Linear Integrated Systems, Inc.	0 In Stock Check Lead Time	1,000 : ¥16.58545 Bulk	J201	Bulk	Active	N-Channel	40 V	40 V	200 µA @ 15 V	10 mA	300 mV @ 10 nA	4.5pF @ 15V	-	350 mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92

Showing

of 13

JFETs

Junction gate field-effect transistors (JFET) are devices used as electronically-controlled switches, amplifiers, or voltage-controlled resistors. A potential difference of the proper polarity applied between the gate and source terminals increases resistance to current flow, which means less current would flow in the channel between the source and drain terminals. JFETs do not need a biasing current due to a charge flowing through a semiconducting channel between source and drain terminals.