GeneSiC Semiconductor Single FETs, MOSFETs

Results: 68
Series
-G2R™G2R™, LoRing™G3R™G3R™, LoRing™LoRing™
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveObsolete
FET Type
-N-Channel
Technology
SiC (Silicon Carbide Junction Transistor)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
100 V300 V600 V650 V750 V1200 V1700 V3300 V
Current - Continuous Drain (Id) @ 25°C
3A (Tc)3A (Tc) (95°C)4A (Tc)4A (Tc) (165°C)4A (Tc) (95°C)5A (Tc)6A (Tc) (90°C)7A (Tc) (165°C)8A (Tc)8A (Tc) (158°C)8A (Tc) (90°C)9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V15V, 18V20V-
Rds On (Max) @ Id, Vgs
10mOhm @ 100A13mOhm @ 100A, 18V24mOhm @ 60A, 15V25mOhm @ 50A26mOhm @ 75A, 15V34mOhm @ 45A, 18V36mOhm @ 50A, 15V45mOhm @ 35A, 18V48mOhm @ 35A, 15V50mOhm @ 20A50mOhm @ 40A, 20V58mOhm @ 40A, 15V
Vgs(th) (Max) @ Id
2.69V @ 10mA2.69V @ 12mA2.69V @ 15mA2.69V @ 2mA2.69V @ 5mA2.69V @ 7.5mA2.7V @ 10mA2.7V @ 15mA2.7V @ 18mA2.7V @ 18mA (Typ)2.7V @ 24mA2.7V @ 2mA
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 15 V11 nC @ 20 V12 nC @ 15 V18 nC @ 15 V21 nC @ 20 V23 nC @ 15 V28 nC @ 15 V29 nC @ 15 V47 nC @ 15 V51 nC @ 15 V54 nC @ 15 V88 nC @ 15 V
Vgs (Max)
+15V, -5V±15V+20V, -10V+20V, -5V+22V, -10V+25V, -10V-
Input Capacitance (Ciss) (Max) @ Vds
111 pF @ 1000 V139 pF @ 1000 V238 pF @ 1000 V324 pF @ 35 V331 pF @ 800 V334 pF @ 800 V454 pF @ 1000 V720 pF @ 35 V724 pF @ 800 V730 pF @ 800 V854 pF @ 1000 V1272 pF @ 1000 V
Power Dissipation (Max)
15W (Tc)20W (Tc)44W (Tc)47W (Tc)48W (Tc)54W (Tc)64W (Tc)71W (Tc)74W (Tc)75W (Tc)80W (Tc)88W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)-55°C ~ 225°C (TJ)175°C (TJ)-
Mounting Type
Chassis MountSurface MountThrough Hole
Supplier Device Package
-SOT-227TO-247TO-247-3TO-247-4TO-247ABTO-257TO-258TO-263-7TO-276TO-46
Package / Case
-SOT-227-4, miniBLOCTO-247-3TO-247-4TO-257-3TO-258-3, TO-258AATO-263-8, D2PAK (7 Leads + Tab), TO-263CATO-276AATO-46-3
Stocking Options
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Media
Marketplace Product
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Mfr Part #
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Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-247-3
G2R1000MT17D
SIC MOSFET N-CH 4A TO247-3
GeneSiC Semiconductor
8,271
In Stock
1 : ¥44.66000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
5A (Tc)
20V
1.2Ohm @ 2A, 20V
5.5V @ 500µA
11 nC @ 20 V
+25V, -10V
111 pF @ 1000 V
-
44W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-3
G3R160MT12D
SIC MOSFET N-CH 22A TO247-3
GeneSiC Semiconductor
1,524
In Stock
1 : ¥53.53000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
22A (Tc)
15V
192mOhm @ 10A, 15V
2.69V @ 5mA
28 nC @ 15 V
±15V
730 pF @ 800 V
-
123W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-3
G3R450MT17D
SIC MOSFET N-CH 9A TO247-3
GeneSiC Semiconductor
2,677
In Stock
1 : ¥59.19000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
9A (Tc)
15V
585mOhm @ 4A, 15V
2.7V @ 2mA
18 nC @ 15 V
±15V
454 pF @ 1000 V
-
88W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-3
G3R75MT12D
SIC MOSFET N-CH 41A TO247-3
GeneSiC Semiconductor
3,389
In Stock
1 : ¥86.20000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
41A (Tc)
15V
90mOhm @ 20A, 15V
2.69V @ 7.5mA
54 nC @ 15 V
+22V, -10V
1560 pF @ 800 V
-
207W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-4 Top
G3R75MT12K
SIC MOSFET N-CH 41A TO247-4
GeneSiC Semiconductor
537
In Stock
1 : ¥88.42000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
41A (Tc)
15V
90mOhm @ 20A, 15V
2.69V @ 7.5mA
54 nC @ 15 V
+22V, -10V
1560 pF @ 800 V
-
207W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
G3R160MT12J-TR
G3R75MT12J-TR
1200V 75M TO-263-7 G3R SIC MOSFE
GeneSiC Semiconductor
5,635
In Stock
1 : ¥90.55000
Cut Tape (CT)
800 : ¥68.46741
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
38A (Tc)
15V, 18V
85mOhm @ 20A, 18V
2.7V @ 10mA
47 nC @ 15 V
+22V, -10V
1545 pF @ 800 V
-
196W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-3
G3R160MT17D
SIC MOSFET N-CH 21A TO247-3
GeneSiC Semiconductor
606
In Stock
1 : ¥100.48000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
21A (Tc)
15V
208mOhm @ 12A, 15V
2.7V @ 5mA
51 nC @ 15 V
±15V
1272 pF @ 1000 V
-
175W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
G3R160MT12J-TR
G3R160MT17J-TR
1700V 160M TO-263-7 G3R SIC MOSF
GeneSiC Semiconductor
1,452
In Stock
1 : ¥106.56000
Cut Tape (CT)
800 : ¥81.60294
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
18A (Tc)
15V
224mOhm @ 10A, 15V
2.7V @ 5mA
29 nC @ 15 V
+15V, -5V
854 pF @ 1000 V
-
145W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-3
G3R40MT12D
SIC MOSFET N-CH 71A TO247-3
GeneSiC Semiconductor
955
In Stock
1 : ¥143.01000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
71A (Tc)
15V
48mOhm @ 35A, 15V
2.69V @ 10mA
106 nC @ 15 V
±15V
2929 pF @ 800 V
-
333W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-4 Top
G3R30MT12K
SIC MOSFET N-CH 90A TO247-4
GeneSiC Semiconductor
1,479
In Stock
1 : ¥184.96000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
90A (Tc)
15V
36mOhm @ 50A, 15V
2.69V @ 12mA
155 nC @ 15 V
±15V
3901 pF @ 800 V
-
400W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
TO-247-3
G3R45MT17D
SIC MOSFET N-CH 61A TO247-3
GeneSiC Semiconductor
971
In Stock
1 : ¥268.70000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
61A (Tc)
15V
58mOhm @ 40A, 15V
2.7V @ 8mA
182 nC @ 15 V
±15V
4523 pF @ 1000 V
-
438W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-4 Top
G3R45MT17K
SIC MOSFET N-CH 61A TO247-4
GeneSiC Semiconductor
749
In Stock
1 : ¥271.49000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
61A (Tc)
15V
58mOhm @ 40A, 15V
2.7V @ 8mA
182 nC @ 15 V
±15V
4523 pF @ 1000 V
-
438W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
TO-247-4 Top
G3R20MT12K
SIC MOSFET N-CH 128A TO247-4
GeneSiC Semiconductor
1,038
In Stock
1 : ¥296.28000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
128A (Tc)
15V
24mOhm @ 60A, 15V
2.69V @ 15mA
219 nC @ 15 V
±15V
5873 pF @ 800 V
-
542W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
TO-247-4 Top
G3R12MT12K
1200V 12M TO-247-4 G3R SIC MOSFE
GeneSiC Semiconductor
336
In Stock
1 : ¥509.07000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
157A (Tc)
15V, 18V
13mOhm @ 100A, 18V
2.7V @ 50mA
288 nC @ 15 V
+22V, -10V
9335 pF @ 800 V
-
567W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
TO-247-4 Top
G3R20MT17K
SIC MOSFET N-CH 124A TO247-4
GeneSiC Semiconductor
1,053
In Stock
1 : ¥880.06000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
124A (Tc)
15V
26mOhm @ 75A, 15V
2.7V @ 15mA
400 nC @ 15 V
±15V
10187 pF @ 1000 V
-
809W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
GA100JT12-227
G3R20MT17N
SIC MOSFET N-CH 100A SOT227
GeneSiC Semiconductor
153
In Stock
1 : ¥1,112.06000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
100A (Tc)
15V
26mOhm @ 75A, 15V
2.7V @ 15mA
400 nC @ 15 V
±15V
10187 pF @ 1000 V
-
523W (Tc)
-55°C ~ 175°C (TJ)
-
-
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
G2R50MT33K
G2R50MT33K
3300V 50M TO-247-4 SIC MOSFET
GeneSiC Semiconductor
272
In Stock
1 : ¥2,427.31000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
3300 V
63A (Tc)
20V
50mOhm @ 40A, 20V
3.5V @ 10mA (Typ)
340 nC @ 20 V
+25V, -10V
7301 pF @ 1000 V
-
536W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
TO-247-3
G3R350MT12D
SIC MOSFET N-CH 11A TO247-3
GeneSiC Semiconductor
8,455
In Stock
1 : ¥38.91000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
11A (Tc)
15V
420mOhm @ 4A, 15V
2.69V @ 2mA
12 nC @ 15 V
±15V
334 pF @ 800 V
-
74W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
G3R160MT12J-TR
G3R160MT12J-TR
1200V 160M TO-263-7 G3R SIC MOSF
GeneSiC Semiconductor
4,698
In Stock
1 : ¥59.60000
Cut Tape (CT)
800 : ¥44.74194
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
19A (Tc)
15V, 18V
180mOhm @ 10A, 18V
2.7V @ 5mA
23 nC @ 15 V
+22V, -10V
724 pF @ 800 V
-
110W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-4 Top
G3R60MT07K
750V 60M TO-247-4 G3R SIC MOSFET
GeneSiC Semiconductor
1,699
In Stock
1 : ¥85.38000
Tube
Tube
Active
-
SiCFET (Silicon Carbide)
750 V
-
-
-
-
-
+20V, -10V
-
-
-
-
-
-
Through Hole
TO-247-4
TO-247-4
TO-247-4 Top
G3R40MT12K
SIC MOSFET N-CH 71A TO247-4
GeneSiC Semiconductor
2,850
In Stock
1 : ¥145.06000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
71A (Tc)
15V
48mOhm @ 35A, 15V
2.69V @ 10mA
106 nC @ 15 V
±15V
2929 pF @ 800 V
-
333W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
G2R1000MT33J-TR
G2R1000MT33J-TR
3300V 1000M TO-263-7 G2R SIC MOS
GeneSiC Semiconductor
697
In Stock
1 : ¥153.44000
Cut Tape (CT)
800 : ¥116.82164
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
3300 V
5A (Tc)
20V
1.2Ohm @ 2A, 20V
3.5V @ 2mA
21 nC @ 20 V
+20V, -5V
238 pF @ 1000 V
-
74W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
GA100JT12-227
G3R20MT12N
SIC MOSFET N-CH 105A SOT227
GeneSiC Semiconductor
217
In Stock
1 : ¥461.37000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
105A (Tc)
15V
24mOhm @ 60A, 15V
2.69V @ 15mA
219 nC @ 15 V
+20V, -10V
5873 pF @ 800 V
-
365W (Tc)
-55°C ~ 175°C (TJ)
-
-
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
TO-247-3
G3R60MT07D
750V 60M TO-247-3 G3R SIC MOSFET
GeneSiC Semiconductor
2,868
In Stock
1 : ¥83.24000
Tube
Tube
Active
-
SiCFET (Silicon Carbide)
750 V
-
-
-
-
-
+20V, -10V
-
-
-
-
-
-
Through Hole
TO-247-3
TO-247-3
G3R160MT12J-TR
G3R350MT12J-TR
1200V 350M TO-263-7 G3R SIC MOSF
GeneSiC Semiconductor
699
In Stock
1 : ¥45.23000
Cut Tape (CT)
800 : ¥33.24873
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
1200 V
10A (Tc)
15V, 18V
395mOhm @ 4A, 18V
2.7V @ 2mA
10 nC @ 15 V
+22V, -10V
331 pF @ 800 V
-
64W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Showing
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GeneSiC Semiconductor Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.