52A (Tc) Single FETs, MOSFETs

Results: 69
Manufacturer
Fairchild SemiconductorGoford SemiconductorHarris CorporationInfineon TechnologiesIXYSLittelfuse Inc.Microchip TechnologyMicrosemi CorporationNexperia USA Inc.NXP USA Inc.onsemiRenesas Electronics CorporationSanken Electric USA Inc.STMicroelectronics
Series
-CoolMOS™CoolMOS™ CFD7CoolSiC™CoolSiC™ Gen 2FRFET®, SuperFET® IIHEXFET®HiPerFET™HiPerFET™, PolarHiPerFET™, PolarP2™HiPerFET™, Q ClassHiPerFET™, Q2 Class
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveNot For New DesignsObsolete
FET Type
N-ChannelP-Channel
Technology
MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
30 V40 V55 V60 V100 V200 V250 V300 V500 V560 V600 V650 V800 V900 V
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V4.5V, 10V5V10V10V, 15V15V15V, 18V18V
Rds On (Max) @ Id, Vgs
6.3mOhm @ 39A, 10V8.5mOhm @ 13A, 10V10mOhm @ 15A, 10V10mOhm @ 28A, 10V12mOhm @ 15A, 10V12mOhm @ 26A, 10V12.5mOhm @ 20A, 10V13.5mOhm @ 26A, 10V13.8mOhm @ 11A, 10V14mOhm @ 26A, 10V14.3mOhm @ 26A, 10V18mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA2V @ 250µA2.1V @ 1mA2.5V @ 1mA2.5V @ 250µA3V @ 250µA3.5V @ 250µA3.9V @ 2.7mA3.9V @ 3mA4V @ 137µA4V @ 1mA4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
9.8 nC @ 5 V14.3 nC @ 10 V15 nC @ 10 V18 nC @ 10 V28 nC @ 10 V33 nC @ 4.5 V36 nC @ 10 V37 nC @ 10 V39 nC @ 18 V43 nC @ 10 V52 nC @ 15 V53.6 nC @ 10 V
Vgs (Max)
±10V±16V+20V, -10V+20V, -7V±20V+23V, -10V+23V, -7V±25V±30V-
Input Capacitance (Ciss) (Max) @ Vds
817 pF @ 15 V1039 pF @ 25 V1254 pF @ 50 V1300 pF @ 25 V1310 pF @ 800 V1350 pF @ 15 V1423 pF @ 25 V1592 pF @ 25 V1800 pF @ 50 V1900 pF @ 800 V1950 pF @ 25 V2130 pF @ 800 V
FET Feature
-Current Sensing
Power Dissipation (Max)
1W (Ta), 50.2W (Tc)1.2W (Ta), 56W (Tc)2W (Ta), 178W (Tc)3.12W (Ta), 250W (Tc)37W (Tc)38.5W (Tc)40W (Tc)58W (Tc)65W (Tc)70W (Tc)71W (Tc)72W (Tc)
Operating Temperature
-65°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)-40°C ~ 175°C (TJ)150°C150°C (TJ)175°C (TJ)-
Grade
-Automotive
Qualification
-AEC-Q101
Mounting Type
Chassis MountSurface MountThrough Hole
Supplier Device Package
8-DFN (3.15x3.05)8-PDFN (3.1x3.1)264 MAX™ [L2]D2PAKDPAKISOTOP®LFPAK56, Power-SO8PG-HDSOP-10-1PG-HSOF-8-2PG-TO247-3PG-TO247-3-1PG-TO247-3-41
Package / Case
8-PowerSFN8-PowerTDFN8-PowerVDFN8-PowerWDFN10-PowerSOP ModulePowerPAK® SO-8PowerPAK® SO-8 DualSC-100, SOT-669SOT-227-4, miniBLOCTO-220-3TO-220-3 Full PackTO-220-3, Short Tab
Stocking Options
Environmental Options
Media
Marketplace Product
69Results
Applied FiltersRemove All

Showing
of 69
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
PowerPAK-SO-8-Single
SQJ459EP-T2_BE3
P-CHANNEL 60-V (D-S) 175C MOSFET
Vishay Siliconix
4,172
In Stock
1 : ¥10.10000
Cut Tape (CT)
3,000 : ¥4.18331
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
52A (Tc)
4.5V, 10V
18mOhm @ 3.5A, 10V
2.5V @ 250µA
108 nC @ 10 V
±20V
4586 pF @ 30 V
-
83W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
PowerPak SO-8L
SQJ459EP-T1_GE3
MOSFET P-CH 60V 52A PPAK SO-8
Vishay Siliconix
16,682
In Stock
1 : ¥11.49000
Cut Tape (CT)
3,000 : ¥4.76620
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
52A (Tc)
4.5V, 10V
18mOhm @ 3.5A, 10V
2.5V @ 250µA
108 nC @ 10 V
±20V
4586 pF @ 30 V
-
83W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
PG-TSON-8-3
BSC220N20NSFDATMA1
MOSFET N-CH 200V 52A TSON-8
Infineon Technologies
11,139
In Stock
1 : ¥38.01000
Cut Tape (CT)
5,000 : ¥17.77012
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
52A (Tc)
10V
22mOhm @ 52A, 10V
4V @ 137µA
43 nC @ 10 V
±20V
3680 pF @ 100 V
-
214W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TSON-8-3
8-PowerTDFN
TO-263AB
IXTA52P10P
MOSFET P-CH 100V 52A TO263
Littelfuse Inc.
1,739
In Stock
1 : ¥54.35000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
100 V
52A (Tc)
10V
50mOhm @ 52A, 10V
4.5V @ 250µA
60 nC @ 10 V
±20V
2845 pF @ 25 V
-
300W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263AA
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-3P
IXTQ52P10P
MOSFET P-CH 100V 52A TO3P
Littelfuse Inc.
1,490
In Stock
1 : ¥59.69000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
100 V
52A (Tc)
10V
50mOhm @ 52A, 10V
4.5V @ 250µA
60 nC @ 10 V
±20V
2845 pF @ 25 V
-
300W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-3P
TO-3P-3, SC-65-3
TO-247-3 AD EP
FCH072N60F
MOSFET N-CH 600V 52A TO247-3
onsemi
70,201
In Stock
1 : ¥72.99000
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
600 V
52A (Tc)
10V
72mOhm @ 26A, 10V
5V @ 250µA
215 nC @ 10 V
±20V
8660 pF @ 100 V
-
481W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-3 AC EP
AIMW120R035M1HXKSA1
1200V COOLSIC MOSFET PG-TO247-3
Infineon Technologies
172
In Stock
1 : ¥290.46000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
52A (Tc)
18V
46mOhm @ 25A, 18V
5.7V @ 10mA
59 nC @ 18 V
+23V, -7V
2130 pF @ 800 V
-
228W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
PG-TO247-3-41
TO-247-3
LFPAK56/POWER-SO8/SOT669
BUK9Y12-40E,115
MOSFET N-CH 40V 52A LFPAK56
Nexperia USA Inc.
4,945
In Stock
1 : ¥6.16000
Cut Tape (CT)
1,500 : ¥2.61077
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
52A (Tc)
5V
10mOhm @ 15A, 10V
2.1V @ 1mA
9.8 nC @ 5 V
±10V
1423 pF @ 25 V
-
65W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
PowerPAK-SO-8-Single
SQJ459EP-T2_GE3
P-CHANNEL 60-V (D-S) 175C MOSFET
Vishay Siliconix
3,941
In Stock
1 : ¥10.10000
Cut Tape (CT)
3,000 : ¥4.18331
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
52A (Tc)
4.5V, 10V
18mOhm @ 3.5A, 10V
2.5V @ 250µA
108 nC @ 10 V
±20V
4586 pF @ 30 V
-
83W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8 Dual
PowerPAK® SO-8 Dual
PowerPAK-SO-8-Single
SQJ459EP-T1_BE3
P-CHANNEL 60-V (D-S) 175C MOSFET
Vishay Siliconix
2,803
In Stock
1 : ¥10.51000
Cut Tape (CT)
3,000 : ¥4.33270
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
52A (Tc)
4.5V, 10V
18mOhm @ 3.5A, 10V
2.5V @ 250µA
108 nC @ 10 V
±20V
4586 pF @ 30 V
-
83W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
TO-247-3 HiP
STW52NK25Z
MOSFET N-CH 250V 52A TO247-3
STMicroelectronics
961
In Stock
1 : ¥53.94000
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
250 V
52A (Tc)
10V
45mOhm @ 26A, 10V
4.5V @ 150µA
160 nC @ 10 V
±30V
4850 pF @ 25 V
-
300W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-AD-EP-(H)
IXTH52P10P
MOSFET P-CH 100V 52A TO247
Littelfuse Inc.
300
In Stock
1 : ¥66.99000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
100 V
52A (Tc)
10V
50mOhm @ 52A, 10V
4.5V @ 250µA
60 nC @ 10 V
±20V
2845 pF @ 25 V
-
300W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247 (IXTH)
TO-247-3
TO-247-3
FCH070N60E
MOSFET N-CH 600V 52A TO247
onsemi
286
In Stock
1 : ¥82.02000
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
600 V
52A (Tc)
10V
70mOhm @ 26A, 10V
3.5V @ 250µA
166 nC @ 10 V
±20V
4925 pF @ 380 V
-
481W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-3 AC EP
IMW120R045M1XKSA1
SICFET N-CH 1.2KV 52A TO247-3
Infineon Technologies
278
In Stock
1 : ¥123.80000
Tube
Tube
Not For New Designs
N-Channel
SiCFET (Silicon Carbide)
1200 V
52A (Tc)
15V
59mOhm @ 20A, 15V
5.7V @ 10mA
52 nC @ 15 V
+20V, -10V
1900 pF @ 800 V
-
228W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-3-41
TO-247-3
CoolSiC Series
IMZ120R045M1XKSA1
SICFET N-CH 1200V 52A TO247-4
Infineon Technologies
170
In Stock
1 : ¥128.57000
Tube
Tube
Not For New Designs
N-Channel
SiCFET (Silicon Carbide)
1200 V
52A (Tc)
15V
59mOhm @ 20A, 15V
5.7V @ 10mA
52 nC @ 15 V
+20V, -10V
1900 pF @ 800 V
Current Sensing
228W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-1
TO-247-4
11,910
In Stock
1 : ¥5.17000
Cut Tape (CT)
5,000 : ¥1.64843
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
52A (Tc)
4.5V, 10V
8.5mOhm @ 13A, 10V
2.5V @ 250µA
14.3 nC @ 10 V
±20V
817 pF @ 15 V
-
37W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
8-PDFN (3.1x3.1)
8-PowerWDFN
LFPAK56/POWER-SO8/SOT669
BUK7Y12-40EX
MOSFET N-CH 40V 52A LFPAK56
Nexperia USA Inc.
4,371
In Stock
1 : ¥7.14000
Cut Tape (CT)
1,500 : ¥3.03801
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
40 V
52A (Tc)
10V
12mOhm @ 15A, 10V
4V @ 1mA
15 nC @ 10 V
±20V
1039 pF @ 25 V
-
65W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
131
In Stock
1 : ¥11.41000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
52A (Tc)
10V
13.8mOhm @ 11A, 10V
4V @ 300µA
28 nC @ 10 V
±20V
1800 pF @ 50 V
-
72W (Tc)
150°C (TJ)
-
-
Through Hole
TO-220
TO-220-3
MFG_DPAK(TO252-3)
STD52P3LLH6
MOSFET P-CH 30V 52A DPAK
STMicroelectronics
4,853
In Stock
1 : ¥13.55000
Cut Tape (CT)
2,500 : ¥5.58904
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
52A (Tc)
4.5V, 10V
12mOhm @ 26A, 10V
2.5V @ 250µA
33 nC @ 4.5 V
±20V
3350 pF @ 25 V
-
70W (Tc)
175°C (TJ)
-
-
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-220-3
IXTP52P10P
MOSFET P-CH 100V 52A TO220AB
Littelfuse Inc.
381
In Stock
400
Factory
1 : ¥52.87000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
100 V
52A (Tc)
10V
50mOhm @ 52A, 10V
4.5V @ 250µA
60 nC @ 10 V
±20V
2845 pF @ 25 V
-
300W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3
TO-263AB
IXTA52P10P-TRL
MOSFET P-CH 100V 52A TO263
Littelfuse Inc.
3,731
In Stock
1 : ¥54.35000
Cut Tape (CT)
800 : ¥34.26003
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
100 V
52A (Tc)
10V
50mOhm @ 26A, 10V
4V @ 250µA
60 nC @ 10 V
±20V
2845 pF @ 25 V
-
300W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-247-3 AD EP
FCH072N60
MOSFET N-CH 600V 52A TO247-3
onsemi
885
In Stock
2,700
Factory
1 : ¥74.46000
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
600 V
52A (Tc)
10V
72mOhm @ 26A, 10V
3.5V @ 250µA
125 nC @ 10 V
±20V
5890 pF @ 380 V
-
481W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
SOT-227-4, miniBLOC
APL502J
MOSFET N-CH 500V 52A ISOTOP
Microchip Technology
99
In Stock
1 : ¥488.15000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
52A (Tc)
15V
90mOhm @ 26A, 12V
4V @ 2.5mA
-
±30V
9000 pF @ 25 V
-
568W (Tc)
-55°C ~ 150°C (TJ)
-
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
11,890
In Stock
1 : ¥9.11000
Cut Tape (CT)
3,000 : ¥3.75774
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
52A (Tc)
10V
14.3mOhm @ 26A, 10V
4V @ 1mA
37 nC @ 10 V
±20V
1950 pF @ 25 V
-
1W (Ta), 50.2W (Tc)
150°C
-
-
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
10-PowerSOP Module
IPDD60R055CFD7XTMA1
MOSFET N-CH 600V 52A HDSOP-10
Infineon Technologies
1,667
In Stock
1 : ¥49.67000
Cut Tape (CT)
1,700 : ¥28.15195
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
600 V
52A (Tc)
-
55mOhm @ 15.1A, 10V
4.5V @ 760µA
67 nC @ 10 V
±20V
2724 pF @ 400 V
-
329W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-HDSOP-10-1
10-PowerSOP Module
Showing
of 69

52A (Tc) Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.