43A (Tc) Single FETs, MOSFETs

Results: 82
Manufacturer
Diodes IncorporatedFairchild SemiconductorInfineon TechnologiesInternational RectifierIXYSLittelfuse Inc.Microchip TechnologyMicrosemi CorporationNexperia USA Inc.onsemiQorvoRohm SemiconductorVishay Siliconix
Series
-EHEXFET®HiPerFET™HiPerFET™, PolarOptiMOS™POWER MOS 7®POWER MOS 8™POWER MOS IV®TrenchMOS™UltraFET™
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)TrayTube
Product Status
ActiveDiscontinued at Digi-KeyLast Time BuyNot For New DesignsObsolete
Technology
MOSFET (Metal Oxide)SiCFET (Cascode SiCJFET)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
25 V30 V55 V60 V80 V100 V150 V200 V500 V600 V650 V800 V900 V1000 V
Drive Voltage (Max Rds On, Min Rds On)
3.3V, 10V4.5V, 10V6V, 10V8V, 10V10V12V18V
Rds On (Max) @ Id, Vgs
7.5mOhm @ 43A, 10V9.3mOhm @ 26A, 10V9.3mOhm @ 40A, 10V13.5mOhm @ 10A, 10V13.8mOhm @ 15A, 10V15.8mOhm @ 25A, 10V17mOhm @ 10A, 10V18mOhm @ 20A, 10V18mOhm @ 33A, 10V18mOhm @ 6A, 10V20.5mOhm @ 15A, 10V22mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
1.7V @ 250µA2V @ 1mA2.25V @ 250µA3V @ 250µA3.5V @ 33µA4V @ 150µA4V @ 1mA4V @ 2.5mA4V @ 250µA4V @ 270µA4V @ 34µA4V @ 50µA4.5V @ 8mA4.8V @ 11.1mA
Gate Charge (Qg) (Max) @ Vgs
8 nC @ 4.5 V11 nC @ 4.5 V23 nC @ 10 V25 nC @ 10 V27.9 nC @ 10 V29.6 nC @ 10 V30 nC @ 10 V41 nC @ 10 V43 nC @ 12 V48 nC @ 10 V55 nC @ 10 V91 nC @ 10 V
Vgs (Max)
+10V, -8V±15V±20V+21V, -4V±25V±30V
Input Capacitance (Ciss) (Max) @ Vds
400 pF @ 12.5 V780 pF @ 15 V1150 pF @ 50 V1261 pF @ 25 V1310 pF @ 25 V1500 pF @ 100 V1529 pF @ 30 V1724 pF @ 25 V1800 pF @ 50 V2031 pF @ 25 V2210 pF @ 50 V2270 pF @ 25 V
Power Dissipation (Max)
1.7W (Ta)2.1W (Ta)3.8W (Ta), 200W (Tc)3.8W (Ta), 300W (Tc)33W (Tc)39W (Tc)40W (Tc)47W (Tc)50W (Tc)71W (Tc)79W (Tc)94W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)175°C (TJ)
Mounting Type
Chassis MountSurface MountThrough Hole
Supplier Device Package
8-PDFN (3.3x3.3)8-PDFN (5x6)D2PAKD2PAK-7DPAKIPAKIPAK (TO-251AA)ISOPLUS247™ISOTOP®LFPAK33LFPAK56, Power-SO8PG-TO220-3
Package / Case
8-PowerTDFNSC-100, SOT-669SOT-1210, 8-LFPAK33 (5-Lead)SOT-227-4, miniBLOCSP4TO-220-3TO-220-3 Full PackTO-247-3TO-247-3 VariantTO-247-4TO-251-3 Short Leads, IPAK, TO-251AATO-252-3, DPAK (2 Leads + Tab), SC-63TO-262-3 Long Leads, I2PAK, TO-262AATO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
LFPAK56/POWER-SO8/SOT669
PSMN020-100YS,115
MOSFET N-CH 100V 43A LFPAK56
Nexperia USA Inc.
137,144
In Stock
1 : ¥8.70000
Cut Tape (CT)
1,500 : ¥3.82068
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
43A (Tc)
10V
20.5mOhm @ 15A, 10V
4V @ 1mA
41 nC @ 10 V
±20V
2210 pF @ 50 V
-
106W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
TO252-3
IRFR3806TRPBF
MOSFET N-CH 60V 43A DPAK
Infineon Technologies
47,361
In Stock
1 : ¥10.02000
Cut Tape (CT)
2,000 : ¥4.12785
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
43A (Tc)
10V
15.8mOhm @ 25A, 10V
4V @ 50µA
30 nC @ 10 V
±20V
1150 pF @ 50 V
-
71W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-220AB PKG
IRF3415PBF
MOSFET N-CH 150V 43A TO220AB
Infineon Technologies
6,879
In Stock
1 : ¥17.57000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
150 V
43A (Tc)
10V
42mOhm @ 22A, 10V
4V @ 250µA
200 nC @ 10 V
±20V
2400 pF @ 25 V
-
200W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
TO-252 D-Pak Top
DMN6017SK3-13
MOSFET N-CHANNEL 60V 43A TO252
Diodes Incorporated
3,579
In Stock
17,500
Factory
1 : ¥4.52000
Cut Tape (CT)
2,500 : ¥1.72091
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
43A (Tc)
4.5V, 10V
18mOhm @ 6A, 10V
3V @ 250µA
55 nC @ 10 V
±20V
2711 pF @ 15 V
-
50W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-220AB PKG
IRFB3806PBF
MOSFET N-CH 60V 43A TO220AB
Infineon Technologies
3,243
In Stock
1 : ¥7.06000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
60 V
43A (Tc)
10V
15.8mOhm @ 25A, 10V
4V @ 50µA
30 nC @ 10 V
±20V
1150 pF @ 50 V
-
71W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
LFPAK33
BUK7M17-80EX
MOSFET N-CH 80V 43A LFPAK33
Nexperia USA Inc.
5,283
In Stock
1 : ¥7.47000
Cut Tape (CT)
1,500 : ¥3.29104
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
43A (Tc)
10V
17mOhm @ 10A, 10V
4V @ 1mA
29.6 nC @ 10 V
±20V
2031 pF @ 25 V
-
79W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
LFPAK33
SOT-1210, 8-LFPAK33 (5-Lead)
LFPAK56/POWER-SO8/SOT669
PSMN059-150Y,115
MOSFET N-CH 150V 43A LFPAK56
Nexperia USA Inc.
8,392
In Stock
1 : ¥9.69000
Cut Tape (CT)
1,500 : ¥4.26631
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
43A (Tc)
10V
59mOhm @ 12A, 10V
4V @ 1mA
27.9 nC @ 10 V
±20V
1529 pF @ 30 V
-
113W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
TO252-3
IPD180N10N3GATMA1
MOSFET N-CH 100V 43A TO252-3
Infineon Technologies
3,506
In Stock
1 : ¥9.85000
Cut Tape (CT)
2,500 : ¥4.08822
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
43A (Tc)
6V, 10V
18mOhm @ 33A, 10V
3.5V @ 33µA
25 nC @ 10 V
±20V
1800 pF @ 50 V
-
71W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-220-3
IPP180N10N3GXKSA1
MOSFET N-CH 100V 43A TO220-3
Infineon Technologies
568
In Stock
1 : ¥11.00000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
43A (Tc)
6V, 10V
18mOhm @ 33A, 10V
3.5V @ 33µA
25 nC @ 10 V
±20V
1800 pF @ 50 V
-
71W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO220-3
TO-220-3
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFS3806TRLPBF
MOSFET N-CH 60V 43A D2PAK
Infineon Technologies
12,428
In Stock
1 : ¥11.17000
Cut Tape (CT)
800 : ¥6.00424
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
43A (Tc)
10V
15.8mOhm @ 25A, 10V
4V @ 50µA
30 nC @ 10 V
±20V
1150 pF @ 50 V
-
71W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF3415STRLPBF
MOSFET N-CH 150V 43A D2PAK
Infineon Technologies
2,426
In Stock
1 : ¥18.72000
Cut Tape (CT)
800 : ¥10.46648
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
150 V
43A (Tc)
10V
42mOhm @ 22A, 10V
4V @ 250µA
200 nC @ 10 V
±20V
2400 pF @ 25 V
-
3.8W (Ta), 200W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFS38N20DTRLP
MOSFET N-CH 200V 43A D2PAK
Infineon Technologies
1,831
In Stock
1 : ¥25.86000
Cut Tape (CT)
800 : ¥15.62634
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
200 V
43A (Tc)
10V
54mOhm @ 26A, 10V
5V @ 250µA
91 nC @ 10 V
±20V
2900 pF @ 25 V
-
3.8W (Ta), 300W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO-220-FP
IPA075N15N3GXKSA1
MOSFET N-CH 150V 43A TO220-3
Infineon Technologies
576
In Stock
1 : ¥50.24000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
150 V
43A (Tc)
8V, 10V
7.5mOhm @ 43A, 10V
4V @ 270µA
93 nC @ 10 V
±20V
7280 pF @ 75 V
-
39W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO220-FP
TO-220-3 Full Pack
TO-247N
SCT4036KEC11
1200V, 36M, 3-PIN THD, TRENCH-ST
Rohm Semiconductor
4,713
In Stock
1 : ¥177.33000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
43A (Tc)
18V
47mOhm @ 21A, 18V
4.8V @ 11.1mA
91 nC @ 18 V
+21V, -4V
2335 pF @ 800 V
-
176W
175°C (TJ)
-
-
Through Hole
TO-247N
TO-247-3
SCT4026DRHRC15
SCT4036KRHRC15
1200V, 43A, 4-PIN THD, TRENCH-ST
Rohm Semiconductor
336
In Stock
1 : ¥182.59000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
43A (Tc)
18V
47mOhm @ 21A, 18V
4.8V @ 11.1mA
91 nC @ 18 V
+21V, -4V
2335 pF @ 800 V
-
176W
175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247-4L
TO-247-4
TO-247-3 AC EP
IRFP3415PBF
MOSFET N-CH 150V 43A TO247AC
Infineon Technologies
3,788
In Stock
1 : ¥18.64000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
150 V
43A (Tc)
10V
42mOhm @ 22A, 10V
4V @ 250µA
200 nC @ 10 V
±20V
2400 pF @ 25 V
-
200W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247AC
TO-247-3
TO252-3
AUIRFR3806TRL
MOSFET N-CH 60V 43A DPAK
Infineon Technologies
6,549
In Stock
1 : ¥18.80000
Cut Tape (CT)
3,000 : ¥8.46196
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
60 V
43A (Tc)
10V
15.8mOhm @ 25A, 10V
4V @ 50µA
30 nC @ 10 V
±20V
1150 pF @ 50 V
-
71W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-252AA (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-220AB Full Pack
IRFI4410ZPBF
MOSFET N-CH 100V 43A TO220AB FP
Infineon Technologies
684
In Stock
1 : ¥21.35000
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
100 V
43A (Tc)
10V
9.3mOhm @ 26A, 10V
4V @ 150µA
110 nC @ 10 V
±30V
4910 pF @ 50 V
-
47W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB Full-Pak
TO-220-3 Full Pack
TO-220AB PKG
IRFB38N20DPBF
MOSFET N-CH 200V 43A TO220AB
Infineon Technologies
1,875
In Stock
1 : ¥22.49000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
43A (Tc)
10V
54mOhm @ 26A, 10V
5V @ 250µA
91 nC @ 10 V
±20V
2900 pF @ 25 V
-
3.8W (Ta), 300W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
TO-220AB
SIHP38N60E-GE3
MOSFET N-CH 600V 43A TO220AB
Vishay Siliconix
939
In Stock
1 : ¥36.70000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
43A (Tc)
10V
65mOhm @ 19A, 10V
4V @ 250µA
183 nC @ 10 V
±30V
3600 pF @ 100 V
-
313W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
UF3C120080B7S
UF3SC065040B7S
650V/40MOHM, SIC, STACKED FAST C
Qorvo
8,461
In Stock
1 : ¥71.75000
Cut Tape (CT)
800 : ¥60.13681
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Cascode SiCJFET)
650 V
43A (Tc)
12V
52mOhm @ 30A, 12V
6V @ 10mA
43 nC @ 12 V
±25V
1500 pF @ 100 V
-
195W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
SCT4026DRHRC15
SCT4036KRC15
1200V, 36M, 4-PIN THD, TRENCH-ST
Rohm Semiconductor
4,777
In Stock
1 : ¥177.33000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
43A (Tc)
18V
47mOhm @ 21A, 18V
4.8V @ 11.1mA
91 nC @ 18 V
+21V, -4V
2335 pF @ 800 V
-
176W
175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
TO-247N
SCT4036KEHRC11
1200V, 43A, 3-PIN THD, TRENCH-ST
Rohm Semiconductor
398
In Stock
1 : ¥182.59000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
43A (Tc)
18V
47mOhm @ 21A, 18V
4.8V @ 11.1mA
91 nC @ 18 V
+21V, -4V
2335 pF @ 800 V
-
176W
175°C (TJ)
Automotive
AEC-Q101
Through Hole
TO-247N
TO-247-3
TO-247-3 AC EP
SIHG47N60AE-GE3
MOSFET N-CH 600V 43A TO247AC
Vishay Siliconix
3,338
In Stock
1 : ¥43.27000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
43A (Tc)
10V
65mOhm @ 24A, 10V
4V @ 250µA
182 nC @ 10 V
±30V
3600 pF @ 100 V
-
313W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247AC
TO-247-3
RF1S9640SM9A
BUK7225-55A,118
N-CHANNEL TRENCHMOS STANDARD LEV
Nexperia USA Inc.
14,196
Marketplace
Unavailable
Unavailable in your selected currency
Bulk
Active
N-Channel
MOSFET (Metal Oxide)
55 V
43A (Tc)
10V
25mOhm @ 25A, 10V
4V @ 1mA
-
±20V
1310 pF @ 25 V
-
94W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
Showing
of 82

43A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.