Single FETs, MOSFETs

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of 16

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

TP65H070G4PS GANFET N-CH 650V 29A TO220 Transphorm	947 In Stock	1 : ¥71.01000 Tube	SuperGaN®	Tube	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	29A (Tc)	10V	85mOhm @ 18A, 10V	4.7V @ 700µA	9 nC @ 10 V	±20V	638 pF @ 400 V	-	96W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
TP65H035G4WS GANFET N-CH 650V 46.5A TO247-3 Transphorm	773 In Stock	1 : ¥147.28000 Tube	SuperGaN™	Tube	Active	N-Channel	GaNFET (Cascode Gallium Nitride FET)	650 V	46.5A (Tc)	10V	41mOhm @ 30A, 10V	4.8V @ 1mA	22 nC @ 0 V	±20V	1500 pF @ 400 V	-	156W (Tc)	-55°C ~ 150°C	-	-	Through Hole	TO-247-3	TO-247-3
TP65H015G5WS 650 V 95 A GAN FET Transphorm	140 In Stock	1 : ¥264.85000 Tube	SuperGaN™	Tube	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	93A (Tc)	10V	18mOhm @ 60A, 10V	4.8V @ 2mA	100 nC @ 10 V	±20V	5218 pF @ 400 V	-	266W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
IMW120R014M1HXKSA1 SIC DISCRETE Infineon Technologies	140 In Stock	1 : ¥271.91000 Tube	CoolSiC™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	127A (Tc)	15V, 18V	18.4mOhm @ 54.3A, 18V	5.2V @ 23.4mA	145 nC @ 18 V	+20V, -5V	4580 pF @ 800 V	-	455W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-3	TO-247-3
TP65H300G4LSG-TR GANFET N-CH 650V 6.5A 3PQFN Transphorm	6,433 In Stock	1 : ¥29.47000 Cut Tape (CT) 3,000 : ¥13.58548 Tube	-	Cut Tape (CT) Digi-Reel® Tube	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	6.5A (Tc)	8V	312mOhm @ 5A, 8V	2.6V @ 500µA	9.6 nC @ 8 V	±18V	760 pF @ 400 V	-	21W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	3-PQFN (8x8)	3-PowerDFN
TPH3206PS GANFET N-CH 600V 17A TO220AB Transphorm	304 In Stock	1 : ¥78.16000 Tube	-	Tube	Not For New Designs	N-Channel	GaNFET (Gallium Nitride)	600 V	17A (Tc)	10V	180mOhm @ 11A, 8V	2.6V @ 500µA	9.3 nC @ 4.5 V	±18V	760 pF @ 480 V	-	96W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
TP65H035WS GANFET N-CH 650V 46.5A TO247-3 Transphorm	294 In Stock	1 : ¥115.35000 Tube	-	Tube	Active	N-Channel	GaNFET (Cascode Gallium Nitride FET)	650 V	46.5A (Tc)	12V	41mOhm @ 30A, 10V	4.8V @ 1mA	36 nC @ 10 V	±20V	1500 pF @ 400 V	-	156W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
TP65H035G4WSQA 650 V 46.5 GAN FET Transphorm	241 In Stock	1 : ¥158.61000 Tube	-	Tube	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	47.2A (Tc)	10V	41mOhm @ 30A, 10V	4.8V @ 1mA	22 nC @ 10 V	±20V	1500 pF @ 400 V	-	187W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-3	TO-247-3
GAN063-650WSAQ GANFET N-CH 650V 34.5A TO247-3 Nexperia USA Inc.	570 In Stock	1 : ¥162.64000 Tube	-	Tube	Active	N-Channel	GaNFET (Cascode Gallium Nitride FET)	650 V	34.5A (Tc)	10V	60mOhm @ 25A, 10V	4.5V @ 1mA	15 nC @ 10 V	±20V	1000 pF @ 400 V	-	143W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
SCT3080ALGC11 SICFET N-CH 650V 30A TO247N Rohm Semiconductor	1,516 In Stock	1 : ¥98.27000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	30A (Tc)	18V	104mOhm @ 10A, 18V	5.6V @ 5mA	48 nC @ 18 V	+22V, -4V	571 pF @ 500 V	-	134W (Tc)	175°C (TJ)	-	-	Through Hole	TO-247N	TO-247-3
TP65H035WSQA GANFET N-CH 650V 47.2A TO247-3 Transphorm	540 In Stock	1 : ¥174.95000 Tube	-	Tube	Active	N-Channel	GaNFET (Cascode Gallium Nitride FET)	650 V	47.2A (Tc)	10V	41mOhm @ 32A, 10V	4.5V @ 1mA	24 nC @ 10 V	±20V	1500 pF @ 400 V	-	187W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-3	TO-247-3
TP65H070G4LSGB-TR GANFET N-CH 650V 29A QFN8X8 Transphorm	2,964 In Stock	1 : ¥88.58000 Cut Tape (CT) 3,000 : ¥47.09678 Tape & Reel (TR)	SuperGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	29A (Tc)	10V	85mOhm @ 16A, 10V	4.6V @ 700µA	8.4 nC @ 10 V	±20V	600 pF @ 400 V	-	96W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-PQFN (8x8)	8-PowerTDFN
TP65H050G4WS 650 V 34 A GAN FET Transphorm	89 In Stock	1 : ¥117.89000 Tube	SuperGaN®	Tube	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	34A (Tc)	10V	60mOhm @ 22A, 10V	4.8V @ 700µA	24 nC @ 10 V	±20V	1000 pF @ 400 V	-	119W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
TP65H050WSQA GANFET N-CH 650V 36A TO247-3 Transphorm	21 In Stock	1 : ¥155.82000 Tube	-	Tube	Active	N-Channel	GaNFET (Cascode Gallium Nitride FET)	650 V	36A (Tc)	10V	60mOhm @ 25A, 10V	4.8V @ 700µA	24 nC @ 10 V	±20V	1000 pF @ 400 V	-	150W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-3	TO-247-3
TP65H480G4JSG MOSFET 650V, 480mOhm Transphorm	0 In Stock Check Lead Time	4,000 : ¥12.24133 Bulk	SuperGaN®	Bulk	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	3.6A (Tc)	8V	560mOhm @ 3.4A, 8V	2.8V @ 500µA	9 nC @ 8 V	±18V	760 pF @ 400 V	-	13.2W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	3-PQFN (5x6)	3-PowerTDFN
TP90H050WS GANFET N-CH 900V 34A TO247-3 Transphorm	0 In Stock	450 : ¥97.98949 Tube	-	Tube	Obsolete	N-Channel	GaNFET (Cascode Gallium Nitride FET)	900 V	34A (Tc)	10V	63mOhm @ 22A, 10V	4.4V @ 700µA	17.5 nC @ 10 V	±20V	980 pF @ 600 V	-	119W (Tc)	-55°C ~ 150°C	-	-	Through Hole	TO-247-3	TO-247-3

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.

Single FETs, MOSFETs

Single FETs, MOSFETs

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