2.5A (Tc) Single FETs, MOSFETs

Results: 100
Manufacturer
Alpha & Omega Semiconductor Inc.Diodes IncorporatedFairchild SemiconductorGoford SemiconductorHarris CorporationInfineon TechnologiesInternational RectifierLittelfuse Inc.Microsemi CorporationNXP USA Inc.onsemiPanasonic Electronic ComponentsSTMicroelectronicsTaiwan Semiconductor Corporation
Series
-CoolMOS™ P7HEXFET®Military, MIL-PRF-19500/557PowerMESH™QFET®STripFET™ IISuperMESH3™SuperMESH5™SuperMESH™TrenchFET®TrenchMOS™UniFET-II™
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveDiscontinued at Digi-KeyLast Time BuyNot For New DesignsObsolete
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V30 V60 V100 V150 V200 V250 V400 V450 V500 V525 V600 V620 V800 V
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V2.7V, 4.5V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
85mOhm @ 3.6A, 4.5V117mOhm @ 500mA, 10V150mOhm @ 2.4A, 10V170mOhm @ 1.7A, 10V170mOhm @ 1.8A, 10V200mOhm @ 1A, 4.5V220mOhm @ 1.5A, 10V220mOhm @ 2A, 10V250mOhm @ 1A, 10V430mOhm @ 1.75A, 10V1.5Ohm @ 1.5A, 10V1.6Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id
600mV @ 250µA (Min)650mV @ 1mA (Min)2V @ 1mA2V @ 250µA2.5V @ 250µA3V @ 250µA3.5V @ 40µA4V @ 1mA4V @ 250µA4.5V @ 250µA4.5V @ 50µA5V @ 100µA5V @ 1mA5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2 nC @ 10 V4.46 nC @ 10 V4.6 nC @ 10 V4.7 nC @ 4.5 V5.1 nC @ 10 V6.8 nC @ 10 V7.5 nC @ 10 V7.9 nC @ 10 V8 nC @ 10 V8.2 nC @ 10 V9.5 nC @ 10 V10 nC @ 4.5 V
Vgs (Max)
±8V±12V±20V±25V±30V-
Input Capacitance (Ciss) (Max) @ Vds
130 pF @ 100 V147 pF @ 10 V150 pF @ 500 V160 pF @ 25 V170 pF @ 20 V175 pF @ 100 V180 pF @ 25 V210 pF @ 25 V230 pF @ 10 V230 pF @ 25 V270 pF @ 20 V273.5 pF @ 25 V
FET Feature
-Schottky Diode (Isolated)
Power Dissipation (Max)
800mW (Ta), 25W (Tc)830mW (Tc)1W (Ta), 10W (Tc)1.5W (Tc)1.6W (Ta), 2.5W (Tc)1.9W (Tc)2W (Ta), 30W (Tc)2W (Tc)2.5W (Ta), 30W (Tc)2.5W (Tc)3W (Ta), 55W (Tc)3.1W (Ta), 50W (Tc)
Operating Temperature
-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-50°C ~ 150°C (TJ)150°C (TJ)-
Grade
AutomotiveMilitary
Qualification
AEC-Q101MIL-PRF-19500/557
Mounting Type
Surface MountThrough Hole
Supplier Device Package
8-SO8-SOIC18-ULCC (9.14x7.49)DPAKDPAK3 (IPAK)H2PAKI2PAKIPAKISO247ITO-220ABPG-SOT223PG-TO251-3
Package / Case
8-PowerVDFN8-SOIC (0.154", 3.90mm Width)18-CLCCTO-205AD, TO-39-3 Metal CanTO-205AF Metal CanTO-220-3TO-220-3 Full PackTO-220-3 Full Pack, Isolated TabTO-236-3, SC-59, SOT-23-3TO-243AATO-247-3TO-251-3 Short Leads, IPAK, TO-251AATO-252-3, DPAK (2 Leads + Tab), SC-63TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
100Results
Applied FiltersRemove All
Showing
of 100
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
MFG_DPAK(TO252-3)
STD3NK80ZT4
MOSFET N-CH 800V 2.5A DPAK
STMicroelectronics
7,140
In Stock
1 : ¥13.05000
Cut Tape (CT)
2,500 : ¥5.88909
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
800 V
2.5A (Tc)
10V
4.5Ohm @ 1.25A, 10V
4.5V @ 50µA
19 nC @ 10 V
±30V
485 pF @ 25 V
-
70W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-220FP
STF3NK80Z
MOSFET N-CH 800V 2.5A TO220FP
STMicroelectronics
5,913
In Stock
1 : ¥17.40000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
800 V
2.5A (Tc)
10V
4.5Ohm @ 1.25A, 10V
4.5V @ 50µA
19 nC @ 10 V
±30V
485 pF @ 25 V
-
25W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220FP
TO-220-3 Full Pack
MFG_DPAK(TO252-3)
STD3NK100Z
MOSFET N-CH 1000V 2.5A DPAK
STMicroelectronics
7,924
In Stock
1 : ¥19.46000
Cut Tape (CT)
2,500 : ¥8.77628
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
1000 V
2.5A (Tc)
10V
6Ohm @ 1.25A, 10V
4.5V @ 50µA
18 nC @ 10 V
±30V
601 pF @ 25 V
-
90W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
MOSFET N-CH 1500V 2.5A H2PAK
STH3N150-2
MOSFET N-CH 1500V 2.5A H2PAK
STMicroelectronics
2,045
In Stock
1 : ¥43.51000
Cut Tape (CT)
1,000 : ¥22.50734
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
1500 V
2.5A (Tc)
10V
9Ohm @ 1.3A, 10V
5V @ 250µA
29.3 nC @ 10 V
±30V
939 pF @ 25 V
-
140W (Tc)
150°C (TJ)
-
-
Surface Mount
H2PAK
TO-263-3, D2PAK (2 Leads + Tab), Variant
SOT-23-3
SQ2303ES-T1_GE3
MOSFET P-CH 30V 2.5A TO236
Vishay Siliconix
15,163
In Stock
1 : ¥4.19000
Cut Tape (CT)
3,000 : ¥1.42120
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
2.5A (Tc)
4.5V, 10V
170mOhm @ 1.8A, 10V
2.5V @ 250µA
6.8 nC @ 10 V
±20V
210 pF @ 25 V
-
1.9W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
TO-252, (D-Pak)
AOD3N60
MOSFET N-CH 600V 2.5A TO252
Alpha & Omega Semiconductor Inc.
6,951
In Stock
1 : ¥6.32000
Cut Tape (CT)
2,500 : ¥2.38682
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
600 V
2.5A (Tc)
10V
3.5Ohm @ 1.25A, 10V
4.5V @ 250µA
12 nC @ 10 V
±30V
370 pF @ 25 V
-
56.8W (Tc)
-50°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-SOT223
IPN80R2K4P7ATMA1
MOSFET N-CH 800V 2.5A SOT223
Infineon Technologies
14,325
In Stock
1 : ¥6.65000
Cut Tape (CT)
3,000 : ¥2.54044
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
800 V
2.5A (Tc)
10V
2.4Ohm @ 800mA, 10V
3.5V @ 40µA
7.5 nC @ 10 V
±20V
150 pF @ 500 V
-
6.3W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-SOT223
TO-261-4, TO-261AA
TO252-3
IPD80R2K4P7ATMA1
MOSFET N-CH 800V 2.5A TO252-3
Infineon Technologies
3,151
In Stock
1 : ¥7.47000
Cut Tape (CT)
2,500 : ¥2.82756
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
800 V
2.5A (Tc)
10V
2.4Ohm @ 800mA, 10V
3.5V @ 40µA
7.5 nC @ 10 V
±20V
150 pF @ 500 V
-
22W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
MFG_DPAK(TO252-3)
STD3N80K5
MOSFET N-CH 800V 2.5A DPAK
STMicroelectronics
4,884
In Stock
1 : ¥10.59000
Cut Tape (CT)
2,500 : ¥4.38476
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
800 V
2.5A (Tc)
10V
3.5Ohm @ 1A, 10V
5V @ 100µA
9.5 nC @ 10 V
±30V
130 pF @ 100 V
-
60W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
DPAK
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-220AB
IRF820PBF
MOSFET N-CH 500V 2.5A TO220AB
Vishay Siliconix
829
In Stock
1 : ¥11.08000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
2.5A (Tc)
10V
3Ohm @ 1.5A, 10V
4V @ 250µA
24 nC @ 10 V
±20V
360 pF @ 25 V
-
50W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
TO-220AB
IRF820APBF
MOSFET N-CH 500V 2.5A TO220AB
Vishay Siliconix
4,268
In Stock
1 : ¥13.71000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
2.5A (Tc)
10V
3Ohm @ 1.5A, 10V
4.5V @ 250µA
17 nC @ 10 V
±30V
340 pF @ 25 V
-
50W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
TO-247-3 HiP
STW3N150
MOSFET N-CH 1500V 2.5A TO247-3
STMicroelectronics
414
In Stock
1 : ¥38.59000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1500 V
2.5A (Tc)
10V
9Ohm @ 1.3A, 10V
5V @ 250µA
29.3 nC @ 10 V
±30V
939 pF @ 25 V
-
140W (Tc)
150°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-220-3
STP3N150
MOSFET N-CH 1500V 2.5A TO220AB
STMicroelectronics
1,690
In Stock
1 : ¥39.98000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1500 V
2.5A (Tc)
10V
9Ohm @ 1.3A, 10V
5V @ 250µA
29.3 nC @ 10 V
±30V
939 pF @ 25 V
-
140W (Tc)
150°C (TJ)
-
-
Through Hole
TO-220
TO-220-3
SOT-23-3
SQ2303ES-T1_BE3
MOSFET P-CH 30V 2.5A SOT23-3
Vishay Siliconix
8,013
In Stock
1 : ¥4.19000
Cut Tape (CT)
3,000 : ¥1.42120
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
2.5A (Tc)
4.5V, 10V
170mOhm @ 1.7A, 10V
2.5V @ 250µA
6.8 nC @ 10 V
±20V
210 pF @ 25 V
-
1.9W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
TO-263AB
IRF820ASPBF
MOSFET N-CH 500V 2.5A D2PAK
Vishay Siliconix
853
In Stock
1 : ¥9.36000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
2.5A (Tc)
10V
3Ohm @ 1.5A, 10V
4.5V @ 250µA
17 nC @ 10 V
±30V
340 pF @ 25 V
-
50W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-220FP
STF3N80K5
MOSFET N-CH 800V 2.5A TO220FP
STMicroelectronics
1,218
In Stock
1 : ¥10.34000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
800 V
2.5A (Tc)
10V
3.5Ohm @ 1A, 10V
5V @ 100µA
9.5 nC @ 10 V
±30V
130 pF @ 100 V
-
20W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220FP
TO-220-3 Full Pack
8PowerVDFN
STL4N80K5
MOSFET N-CH 800V 2.5A POWERFLAT
STMicroelectronics
6,000
In Stock
1 : ¥14.61000
Cut Tape (CT)
3,000 : ¥6.60150
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
800 V
2.5A (Tc)
10V
2.5Ohm @ 1.5A, 10V
5V @ 100µA
10.5 nC @ 10 V
±30V
175 pF @ 100 V
-
38W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
PowerFlat™ (5x6)
8-PowerVDFN
TO-220FP
STF3NK100Z
MOSFET N-CH 1000V 2.5A TO220FP
STMicroelectronics
890
In Stock
1 : ¥30.70000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1000 V
2.5A (Tc)
10V
6Ohm @ 1.25A, 10V
4.5V @ 50µA
18 nC @ 10 V
±30V
601 pF @ 25 V
-
25W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220FP
TO-220-3 Full Pack
TO-3P-3 Full Pack
STFW3N150
MOSFET N-CH 1500V 2.5A ISOWATT
STMicroelectronics
990
In Stock
1 : ¥33.99000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1500 V
2.5A (Tc)
10V
9Ohm @ 1.3A, 10V
5V @ 250µA
29.3 nC @ 10 V
±30V
939 pF @ 25 V
-
63W (Tc)
150°C (TJ)
-
-
Through Hole
TO-3PF
TO-3P-3 Full Pack
TO-220-3
STP3NK80Z
MOSFET N-CH 800V 2.5A TO220AB
STMicroelectronics
975
In Stock
1 : ¥9.93000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
800 V
2.5A (Tc)
10V
4.5Ohm @ 1.25A, 10V
4.5V @ 50µA
19 nC @ 10 V
±30V
485 pF @ 25 V
-
70W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220
TO-220-3
TO-220-3
STP3N80K5
MOSFET N-CH 800V 2.5A TO220
STMicroelectronics
1,841
In Stock
1 : ¥13.46000
Tube
Tube
Not For New Designs
N-Channel
MOSFET (Metal Oxide)
800 V
2.5A (Tc)
10V
3.5Ohm @ 1A, 10V
5V @ 100µA
9.5 nC @ 10 V
±30V
130 pF @ 100 V
-
60W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220
TO-220-3
TO-220AB
IRF820APBF-BE3
MOSFET N-CH 500V 2.5A TO220AB
Vishay Siliconix
714
In Stock
1 : ¥13.71000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
2.5A (Tc)
-
3Ohm @ 1.5A, 10V
4.5V @ 250µA
17 nC @ 10 V
±30V
340 pF @ 25 V
-
50W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220AB
TO-220-3
TO-263AB
IRF820STRRPBF
MOSFET N-CH 500V 2.5A D2PAK
Vishay Siliconix
1,546
In Stock
1 : ¥14.61000
Cut Tape (CT)
800 : ¥6.14709
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
500 V
2.5A (Tc)
10V
3Ohm @ 1.5A, 10V
4V @ 250µA
24 nC @ 10 V
±20V
360 pF @ 25 V
-
3.1W (Ta), 50W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-220-3
STP4N52K3
MOSFET N-CH 525V 2.5A TO220
STMicroelectronics
2,203
In Stock
1 : ¥8.21000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
525 V
2.5A (Tc)
10V
2.6Ohm @ 1.25A, 10V
4.5V @ 50µA
11 nC @ 10 V
±30V
334 pF @ 100 V
-
45W (Tc)
150°C (TJ)
-
-
Through Hole
TO-220
TO-220-3
I-Pak
STD3NK80Z-1
MOSFET N-CH 800V 2.5A IPAK
STMicroelectronics
3,000
In Stock
1 : ¥15.52000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
800 V
2.5A (Tc)
10V
4.5Ohm @ 1.25A, 10V
4.5V @ 50µA
19 nC @ 10 V
±30V
485 pF @ 25 V
-
70W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-251 (IPAK)
TO-251-3 Short Leads, IPAK, TO-251AA
Showing
of 100

2.5A (Tc) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.