Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRLB8721PBF MOSFET N-CH 30V 62A TO220AB Infineon Technologies	14,756 In Stock	1 : ¥8.62000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	30 V	62A (Tc)	4.5V, 10V	8.7mOhm @ 31A, 10V	2.35V @ 25µA	13 nC @ 4.5 V	±20V	1077 pF @ 15 V	-	65W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRLB8748PBF MOSFET N-CH 30V 92A TO220AB Infineon Technologies	3,980 In Stock	1 : ¥8.62000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	30 V	92A (Tc)	4.5V, 10V	4.8mOhm @ 40A, 10V	2.35V @ 50µA	23 nC @ 4.5 V	±20V	2139 pF @ 15 V	-	75W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STP160N3LL MOSFET N-CH 30V 120A TO220 STMicroelectronics	267 In Stock	1 : ¥12.64000 Tube	STripFET™ H6	Tube	Active	N-Channel	MOSFET (Metal Oxide)	30 V	120A (Tc)	4.5V, 10V	3.2mOhm @ 60A, 10V	2.5V @ 250µA	42 nC @ 4.5 V	±20V	3500 pF @ 25 V	-	136W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
IPP120P04P4L03AKSA2 MOSFET P-CH 40V 120A TO220-3 Infineon Technologies	330 In Stock	1 : ¥30.29000 Tube	OptiMOS®-P2	Tube	Active	P-Channel	MOSFET (Metal Oxide)	40 V	120A (Tc)	4.5V, 10V	3.4mOhm @ 100A, 10V	2.2V @ 340µA	234 nC @ 10 V	+5V, -16V	15000 pF @ 25 V	-	136W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
PSMN4R3-30PL,127 MOSFET N-CH 30V 100A TO220AB NXP USA Inc.	17,395 Marketplace	Unavailable Unavailable in your selected currency	*	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PSMN022-30PL,127 MOSFET N-CH 30V 30A TO220AB Nexperia USA Inc.	7,428 In Stock	1 : ¥13.05000 Tube	-	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	30A (Tc)	4.5V, 10V	22mOhm @ 5A, 10V	2.15V @ 1mA	9 nC @ 10 V	±20V	447 pF @ 15 V	-	41W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PSMN017-30PL,127 MOSFET N-CH 30V 32A TO220AB Nexperia USA Inc.	599 In Stock	1 : ¥13.30000 Tube	-	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	32A (Tc)	4.5V, 10V	17mOhm @ 10A, 10V	2.15V @ 1mA	10.7 nC @ 10 V	±20V	552 pF @ 15 V	-	45W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PSMN2R0-30PL,127 MOSFET N-CH 30V 100A TO220AB Nexperia USA Inc.	9,193 In Stock	1 : ¥22.58000 Tube	-	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	100A (Tc)	4.5V, 10V	2.1mOhm @ 15A, 10V	2.15V @ 1mA	117 nC @ 10 V	±20V	6810 pF @ 12 V	-	211W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRLB8314PBF MOSFET N-CH 30V 171A TO220-3 Infineon Technologies	756 In Stock	1 : ¥8.21000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	30 V	171A (Tc)	4.5V, 10V	2.4mOhm @ 68A, 10V	2.2V @ 100µA	60 nC @ 4.5 V	±20V	5050 pF @ 15 V	-	125W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.