FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

SIZ260DT-T1-GE3 MOSFET 2N-CH 80V 8.9A 8PWRPAIR Vishay Siliconix	16,276 In Stock	1 : ¥9.52000 Cut Tape (CT) 3,000 : ¥3.93868 Tape & Reel (TR)	TrenchFET® Gen IV	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-	80V	8.9A (Ta), 24.7A (Tc), 8.9A (Ta), 24.6A (Tc)	24.5mOhm @ 10A, 10V, 24.7mOhm @ 10A, 10V	2.4V @ 250µA	27nC @ 10V	820pF @ 40V	4.3W (Ta), 33W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair® (3.3x3.3)
SIZ270DT-T1-GE3 MOSFET 2N-CH 100V 7.1A 8PWRPAIR Vishay Siliconix	11,290 In Stock	1 : ¥11.16000 Cut Tape (CT) 3,000 : ¥4.61210 Tape & Reel (TR)	TrenchFET® Gen IV	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-	100V	7.1A (Ta), 19.5A (Tc), 6.9A (Ta), 19.1A (Tc)	37.7mOhm @ 7A, 10V, 39.4mOhm @ 7A, 10V	2.4V @ 250µA	27nC @ 10V	860pF @ 50V, 845pF @ 50V	4.3W (Ta), 33W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair® (3.3x3.3)
CSD87312Q3E MOSFET 2N-CH 30V 27A 8VSON Texas Instruments	1,455 In Stock 35,664 Marketplace	1 : ¥11.74000 Cut Tape (CT) 2,500 : ¥4.86676 Tape & Reel (TR) 484 : ¥4.51552 Bulk	NexFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel® Bulk	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual) Common Source	Logic Level Gate	30V	27A	33mOhm @ 7A , 8V	1.3V @ 250µA	8.2nC @ 4.5V	1250pF @ 15V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-VSON (3.3x3.3)
CSD87503Q3ET MOSFET 2N-CH 30V 10A 8VSON Texas Instruments	3,694 In Stock	1 : ¥14.12000 Cut Tape (CT) 250 : ¥9.55192 Tape & Reel (TR)	NexFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual) Common Source	-	30V	10A (Ta)	-	2.1V @ 250µA	17.4nC @ 4.5V	1020pF @ 15V	15.6W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	8-VSON (3.3x3.3)
SIZF5300DT-T1-GE3 MOSFET 2N-CH 30V 35A PWRPAIR Vishay Siliconix	5,155 In Stock	1 : ¥16.34000 Cut Tape (CT) 3,000 : ¥6.84468 Tape & Reel (TR)	TrenchFET® Gen V	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-	30V	35A (Ta), 125A (Tc)	2.43mOhm @ 10A, 10V	2V @ 250µA	32nC @ 10V	1480pF @ 15V	4.5W (Ta), 56.8W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	12-PowerPair™	PowerPAIR® 3x3FS
SIZF640DT-T1-GE3 MOSFET 2N-CH 40V 41A PWRPAIR Vishay Siliconix	0 In Stock Check Lead Time	1 : ¥22.17000 Cut Tape (CT) 3,000 : ¥10.77961 Tape & Reel (TR)	TrenchFET® Gen IV	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-	40V	41A (Ta), 159A (Tc)	1.37mOhm @ 15A, 10V	2.4V @ 250µA	106nC @ 10V	5750pF @ 20V	4.2W (Ta), 62.5W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerDFN	PowerPAIR® 6x5FS
MCB40P1200LB-TUB SIC 2N-CH 1200V 58A SMPD IXYS	0 In Stock Check Lead Time	20 : ¥1,563.64900 Tube	-	Tube	Active	Silicon Carbide (SiC)	2 N-Channel (Dual)	-	1200V (1.2kV)	58A	-	-	-	-	-	-	Surface Mount	9-SMD Power Module	SMPD

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.