IRFB9N65APBF

DigiKey Part Number
IRFB9N65APBF-ND
Manufacturer
Manufacturer Product Number
IRFB9N65APBF
Description
MOSFET N-CH 650V 8.5A TO220AB
Customer Reference
Detailed Description
N-Channel 650 V 8.5A (Tc) 167W (Tc) Through Hole TO-220AB
Datasheet
 Datasheet
EDA/CAD Models
IRFB9N65APBF Models
Product Attributes
Type
Description
Select All
Category
Mfr
Series
-
Packaging
Tube
Part Status
Last Time Buy
FET Type
Technology
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
930mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1417 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
167W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
Base Product Number
All prices are in CNY
Tube
QuantityUnit Price
(Including 13% VAT)
Ext Price
(Including 13% VAT)
1¥15.76000¥15.76
50¥12.52160¥626.08
100¥10.73350¥1,073.35
500¥10.49836¥5,249.18
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.