SIHP11N80E-GE3

DigiKey Part Number
SIHP11N80E-GE3-ND
Manufacturer
Manufacturer Product Number
SIHP11N80E-GE3
Description
MOSFET N-CH 800V 12A TO220AB
Manufacturer Standard Lead Time
23 Weeks
Customer Reference
Detailed Description
N-Channel 800 V 12A (Tc) 179W (Tc) Through Hole TO-220AB
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Series
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
440mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
88 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1670 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
179W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
Base Product Number
All prices are in CNY
Tube
QuantityUnit Price
(Including 13% VAT)
Ext Price
(Including 13% VAT)
1¥27.91000¥27.91
10¥23.41400¥234.14
100¥18.94000¥1,894.00
500¥16.83584¥8,417.92
1,000¥14.41576¥14,415.76
2,000¥13.57393¥27,147.86
5,000¥13.02280¥65,114.00
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.