Single FETs, MOSFETs

Results: 21
Manufacturer
GeneSiC SemiconductorInfineon TechnologiesLittelfuse Inc.Microchip TechnologyonsemiRohm Semiconductor
Series
-CoolSiC™DepletionG2R™G3R™OptiMOS™
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveNot For New Designs
FET Type
-N-Channel
Technology
MOSFET (Metal Oxide)SiC (Silicon Carbide Junction Transistor)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
120 V700 V1200 V1700 V2000 V3300 V
Current - Continuous Drain (Id) @ 25°C
2A (Tj)4A (Tc)5.9A (Tc)6A (Tc)6.4A (Tc)35A41A (Tc)61A (Tc)63A (Tc)68A (Tc)71A (Tc)81A (Tc)100A (Tc)123A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V15V15V, 18V18V20V-
Rds On (Max) @ Id, Vgs
5.1mOhm @ 100A, 10V16.5mOhm @ 60A, 18V19mOhm @ 40A, 20V22mOhm @ 40A, 20V26mOhm @ 75A, 15V40mOhm @ 60A, 20V45mOhm @ 30A, 20V50mOhm @ 40A, 20V58mOhm @ 40A, 15V105mOhm @ 30A, 20V156mOhm @ 20A, 20V940mOhm @ 2.5A, 20V975mOhm @ 1.7A, 18V1Ohm @ 2A, 20V
Vgs(th) (Max) @ Id
2.4V @ 4mA (Typ)2.7V @ 15mA2.7V @ 4.5mA (Typ)2.7V @ 8mA2.97V @ 3mA3.25V @ 100µA (Typ)3.25V @ 2.5mA (Typ)3.5V @ 10mA (Typ)4V @ 1mA4V @ 240µA4V @ 410µA4V @ 630µA4.3V @ 20mA5.5V @ 48mA
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 20 V14 nC @ 18 V17 nC @ 18 V55 nC @ 20 V110 nC @ 5 V145 nC @ 20 V178 nC @ 20 V182 nC @ 15 V185 nC @ 10 V200 nC @ 20 V215 nC @ 20 V222 nC @ 20 V246 nC @ 18 V249 nC @ 20 V
Vgs (Max)
±15V+20V, -7V±20V+22V, -10V+22V, -6V+23V, -10V+25V, -10V+25V, -15V-
Input Capacitance (Ciss) (Max) @ Vds
184 pF @ 800 V184 pF @ 1000 V200 pF @ 1000 V275 pF @ 800 V3300 pF @ 1000 V3462 pF @ 2400 V3650 pF @ 25 V3706 pF @ 1000 V4160 pF @ 800 V4230 pF @ 800 V4500 pF @ 700 V4523 pF @ 1000 V5280 pF @ 1000 V7301 pF @ 1000 V
FET Feature
-Depletion Mode
Power Dissipation (Max)
44W (Tc)57W (Tc)63W (Tc)65W (Tc)300W (Tc)357W (Tc)370W (Tc)381W (Tc)428W (Tc)438W (Tc)523W (Tc)535W (Tc)536W (Tc)552W (Tc)
Operating Temperature
-60°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)175°C (TJ)-
Grade
-Automotive
Qualification
-AEC-Q101
Mounting Type
Chassis MountSurface MountThrough Hole
Supplier Device Package
D2PAK-7D3PAKPG-TO220-3-1PG-TO247-4-U04SOT-227TO-247-3TO-247-4TO-247-4LTO-263-7TO-263-7LTO-268TO-268AA
Package / Case
SOT-227-4, miniBLOCTO-220-3TO-247-3TO-247-4TO-263-8, D2PAK (7 Leads + Tab)TO-263-8, D2PAK (7 Leads + Tab), TO-263CATO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Stocking Options
Environmental Options
Media
Marketplace Product
21Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SCT2xxxNYTB
SCT2750NYTB
SICFET N-CH 1700V 5.9A TO268
Rohm Semiconductor
798
In Stock
1 : ¥55.17000
Cut Tape (CT)
400 : ¥37.09323
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
SiCFET (Silicon Carbide)
1700 V
5.9A (Tc)
18V
975mOhm @ 1.7A, 18V
4V @ 630µA
17 nC @ 18 V
+22V, -6V
275 pF @ 800 V
-
57W (Tc)
175°C (TJ)
-
-
Surface Mount
TO-268
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-247-3
G3R45MT17D
SIC MOSFET N-CH 61A TO247-3
GeneSiC Semiconductor
971
In Stock
1 : ¥268.70000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
61A (Tc)
15V
58mOhm @ 40A, 15V
2.7V @ 8mA
182 nC @ 15 V
±15V
4523 pF @ 1000 V
-
438W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
TO-247-4 Top
G3R45MT17K
SIC MOSFET N-CH 61A TO247-4
GeneSiC Semiconductor
749
In Stock
1 : ¥271.49000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
61A (Tc)
15V
58mOhm @ 40A, 15V
2.7V @ 8mA
182 nC @ 15 V
±15V
4523 pF @ 1000 V
-
438W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
TO-247-4
NTH4L028N170M1
SIC MOSFET 1700 V 28 MOHM M1 SER
onsemi
199
In Stock
3,150
Factory
1 : ¥314.59000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
81A (Tc)
20V
40mOhm @ 60A, 20V
4.3V @ 20mA
200 nC @ 20 V
+25V, -15V
4230 pF @ 800 V
-
535W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4L
TO-247-4
TO-247-4 Top
G3R20MT17K
SIC MOSFET N-CH 124A TO247-4
GeneSiC Semiconductor
1,053
In Stock
1 : ¥880.06000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
124A (Tc)
15V
26mOhm @ 75A, 15V
2.7V @ 15mA
400 nC @ 15 V
±15V
10187 pF @ 1000 V
-
809W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
171
In Stock
1 : ¥897.96000
Tube
Tube
Active
N-Channel
SiC (Silicon Carbide Junction Transistor)
2000 V
123A (Tc)
15V, 18V
16.5mOhm @ 60A, 18V
5.5V @ 48mA
246 nC @ 18 V
+20V, -7V
-
-
552W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
PG-TO247-4-U04
TO-247-4
GA100JT12-227
G3R20MT17N
SIC MOSFET N-CH 100A SOT227
GeneSiC Semiconductor
153
In Stock
1 : ¥1,112.06000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
100A (Tc)
15V
26mOhm @ 75A, 15V
2.7V @ 15mA
400 nC @ 15 V
±15V
10187 pF @ 1000 V
-
523W (Tc)
-55°C ~ 175°C (TJ)
-
-
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
TO-247-4
MSC080SMA330B4
MOSFET SIC 3300 V 80 MOHM TO-247
Microchip Technology
41
In Stock
1 : ¥1,133.41000
Bulk
-
Bulk
Active
N-Channel
SiCFET (Silicon Carbide)
3300 V
41A (Tc)
20V
105mOhm @ 30A, 20V
2.97V @ 3mA
55 nC @ 20 V
+23V, -10V
3462 pF @ 2400 V
-
381W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
G2R50MT33K
G2R50MT33K
3300V 50M TO-247-4 SIC MOSFET
GeneSiC Semiconductor
272
In Stock
1 : ¥2,427.31000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
3300 V
63A (Tc)
20V
50mOhm @ 40A, 20V
3.5V @ 10mA (Typ)
340 nC @ 20 V
+25V, -10V
7301 pF @ 1000 V
-
536W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
513
In Stock
1 : ¥50.82000
Tube
-
Tube
Active
-
SiCFET (Silicon Carbide)
1700 V
6A (Tc)
-
-
-
-
-
-
-
-
-
-
-
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
SCT2xxxNYTB
SCT2H12NYTB
SICFET N-CH 1700V 4A TO268
Rohm Semiconductor
2,317
In Stock
1 : ¥52.46000
Cut Tape (CT)
400 : ¥33.66063
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
SiCFET (Silicon Carbide)
1700 V
4A (Tc)
18V
1.5Ohm @ 1.1A, 18V
4V @ 410µA
14 nC @ 18 V
+22V, -6V
184 pF @ 800 V
-
44W (Tc)
175°C (TJ)
-
-
Surface Mount
TO-268
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
LSIC1MO170TO750_TO-263-7L_1
LSIC1MO170T0750
SICFET N-CH 1700V 6.4A TO263-7L
Littelfuse Inc.
1,054
In Stock
1 : ¥56.97000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
6.4A (Tc)
20V
1Ohm @ 2A, 20V
4V @ 1mA
11 nC @ 20 V
+22V, -6V
200 pF @ 1000 V
-
65W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7L
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
6,516
In Stock
1 : ¥30.62000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
120 V
100A (Tc)
10V
5.1mOhm @ 100A, 10V
4V @ 240µA
185 nC @ 10 V
±20V
11570 pF @ 25 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Through Hole
PG-TO220-3-1
TO-220-3
GA20JT12-263
G2R120MT33J
SIC MOSFET N-CH TO263-7
GeneSiC Semiconductor
429
In Stock
1 : ¥886.87000
Tube
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
3300 V
35A
20V
156mOhm @ 20A, 20V
-
145 nC @ 20 V
+25V, -10V
3706 pF @ 1000 V
-
-
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-268
IXTT2N170D2
MOSFET N-CH 1700V 2A TO268
Littelfuse Inc.
28
In Stock
1 : ¥247.93000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1700 V
2A (Tj)
-
6.5Ohm @ 1A, 0V
-
110 nC @ 5 V
±20V
3650 pF @ 25 V
Depletion Mode
568W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-268AA
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
TO-247-4
MSC035SMA170B4
MOSFET SIC 1700V 35 MOHM TO-247-
Microchip Technology
15
In Stock
1 : ¥343.16000
Bulk
-
Bulk
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
68A (Tc)
20V
45mOhm @ 30A, 20V
3.25V @ 2.5mA (Typ)
178 nC @ 20 V
+23V, -10V
3300 pF @ 1000 V
-
370W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4
D2PAK-7
NTBG028N170M1
SIC MOSFET 1700 V 28 MOHM M1 SER
onsemi
56
In Stock
1 : ¥296.94000
Cut Tape (CT)
800 : ¥205.67913
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
71A (Tc)
20V
40mOhm @ 60A, 20V
4.3V @ 20mA
222 nC @ 20 V
+25V, -15V
4160 pF @ 800 V
-
428W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-247-3
MSC035SMA170B
MOSFET SIC 1700 V 45 MOHM TO-247
Microchip Technology
9
In Stock
1 : ¥333.06000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
68A (Tc)
20V
45mOhm @ 30A, 20V
3.25V @ 2.5mA (Typ)
178 nC @ 20 V
+23V, -10V
3300 pF @ 1000 V
-
370W (Tc)
-60°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
TO-247-3
D3PAK
MSC015SMA070S
SICFET N-CH 700V 126A D3PAK
Microchip Technology
30
In Stock
1 : ¥301.21000
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
700 V
126A (Tc)
20V
19mOhm @ 40A, 20V
2.4V @ 4mA (Typ)
215 nC @ 20 V
+23V, -10V
4500 pF @ 700 V
-
370W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
D2PAK-7
MSC750SMA170SA
MOSFET SIC 1700 V 750 MOHM D2PAK
Microchip Technology
0
In Stock
Check Lead Time
150 : ¥37.68167
Tube
-
Tube
Active
N-Channel
SiCFET (Silicon Carbide)
1700 V
6A (Tc)
20V
940mOhm @ 2.5A, 20V
3.25V @ 100µA (Typ)
11 nC @ 20 V
+23V, -10V
184 pF @ 1000 V
-
63W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab)
D3PAK
MSC017SMA120S
MOSFET SIC 1200V 17 MOHM TO-268
Microchip Technology
0
In Stock
Check Lead Time
30 : ¥360.56433
Bulk
-
Bulk
Active
N-Channel
SiCFET (Silicon Carbide)
1200 V
100A (Tc)
20V
22mOhm @ 40A, 20V
2.7V @ 4.5mA (Typ)
249 nC @ 20 V
+22V, -10V
5280 pF @ 1000 V
-
357W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
D3PAK
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Showing
of 21

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.